TU Darmstadt / ULB / TUbiblio

Enhancing magnetic properties in Mn3Ge thin films by doping

Balluff, Jan ; Schmalhorst, Jan-Michael ; Arenholz, Elke ; Meinert, Markus ; Reiss, Günter (2018)
Enhancing magnetic properties in Mn3Ge thin films by doping.
In: Physical Review B, 97 (1)
doi: 10.1103/physrevb.97.014403
Artikel, Bibliographie

Kurzbeschreibung (Abstract)

The ferrimagnetic Mn3Ge compound has appealing properties for spintronic applications, e.g., a low saturation magnetization, and often a large coercive field is found. Here, we report on a combined experimental and theoretical approach to both reduce the magnetization and increase the coercivity of Mn3Ge by doping. By calculating defect formation energies, we predict several dopants that are expected to specifically occupy only one lattice site of the crystal structure. For Ni as a dopant, we predict a reduction in the magnetization, which we verify by preparing thin film samples by magnetron co-sputtering. We confirm the predicted reduction in magnetization as well as a greatly enhanced coercivity of more than 5 T. To improve the understanding of the sublattice magnetization in the doped ferrimagnetic material, we performed magnetic spectroscopy experiments on selected samples and compared the results with calculated data. An important finding from a detailed analysis of the spectroscopic data is that a frequently observed soft contribution in the magnetization loop arises from impurities in the film.

Typ des Eintrags: Artikel
Erschienen: 2018
Autor(en): Balluff, Jan ; Schmalhorst, Jan-Michael ; Arenholz, Elke ; Meinert, Markus ; Reiss, Günter
Art des Eintrags: Bibliographie
Titel: Enhancing magnetic properties in Mn3Ge thin films by doping
Sprache: Englisch
Publikationsjahr: 3 Januar 2018
Verlag: APS Publishing
Titel der Zeitschrift, Zeitung oder Schriftenreihe: Physical Review B
Jahrgang/Volume einer Zeitschrift: 97
(Heft-)Nummer: 1
DOI: 10.1103/physrevb.97.014403
Kurzbeschreibung (Abstract):

The ferrimagnetic Mn3Ge compound has appealing properties for spintronic applications, e.g., a low saturation magnetization, and often a large coercive field is found. Here, we report on a combined experimental and theoretical approach to both reduce the magnetization and increase the coercivity of Mn3Ge by doping. By calculating defect formation energies, we predict several dopants that are expected to specifically occupy only one lattice site of the crystal structure. For Ni as a dopant, we predict a reduction in the magnetization, which we verify by preparing thin film samples by magnetron co-sputtering. We confirm the predicted reduction in magnetization as well as a greatly enhanced coercivity of more than 5 T. To improve the understanding of the sublattice magnetization in the doped ferrimagnetic material, we performed magnetic spectroscopy experiments on selected samples and compared the results with calculated data. An important finding from a detailed analysis of the spectroscopic data is that a frequently observed soft contribution in the magnetization loop arises from impurities in the film.

Zusätzliche Informationen:

Art.No.: 014403

Fachbereich(e)/-gebiet(e): 18 Fachbereich Elektrotechnik und Informationstechnik
18 Fachbereich Elektrotechnik und Informationstechnik > Institut für Mikrowellentechnik und Photonik (IMP)
18 Fachbereich Elektrotechnik und Informationstechnik > Institut für Mikrowellentechnik und Photonik (IMP) > Neue Materialien Elektronik
Hinterlegungsdatum: 14 Jan 2022 11:02
Letzte Änderung: 14 Jan 2022 11:02
PPN:
Export:
Suche nach Titel in: TUfind oder in Google
Frage zum Eintrag Frage zum Eintrag

Optionen (nur für Redakteure)
Redaktionelle Details anzeigen Redaktionelle Details anzeigen