Meinert, M. ; Dunz, M. ; Schmalhorst, J. (2018)
Enhanced exchange bias in MnN/CoFe bilayers after high-temperature annealing.
In: AIP Advances, 8 (5)
doi: 10.1063/1.5006551
Artikel, Bibliographie
Kurzbeschreibung (Abstract)
We report an exchange bias of more than 2700 Oe at room temperature in MnN/CoFe bilayers after high-temperature annealing. We studied the dependence of exchange bias on the annealing temperature for different MnN thicknesses in detail and found that samples with tMnN > 32nm show an increase of exchange bias for annealing temperatures higher than TA = 400 °C. Maximum exchange bias values exceeding 2000 Oe with reasonably small coercive fields around 600 Oe are achieved for tMnN = 42, 48 nm. The median blocking temperature of those systems is determined to be 180 °C after initial annealing at TA = 525 °C. X-ray diffraction measurements and Auger depth profiling show that the large increase of exchange bias after high-temperature annealing is accompanied by strong nitrogen diffusion into the Ta buffer layer of the stacks.
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2018 |
| Autor(en): | Meinert, M. ; Dunz, M. ; Schmalhorst, J. |
| Art des Eintrags: | Bibliographie |
| Titel: | Enhanced exchange bias in MnN/CoFe bilayers after high-temperature annealing |
| Sprache: | Englisch |
| Publikationsjahr: | 2018 |
| Verlag: | AIP Publishing |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | AIP Advances |
| Jahrgang/Volume einer Zeitschrift: | 8 |
| (Heft-)Nummer: | 5 |
| DOI: | 10.1063/1.5006551 |
| Kurzbeschreibung (Abstract): | We report an exchange bias of more than 2700 Oe at room temperature in MnN/CoFe bilayers after high-temperature annealing. We studied the dependence of exchange bias on the annealing temperature for different MnN thicknesses in detail and found that samples with tMnN > 32nm show an increase of exchange bias for annealing temperatures higher than TA = 400 °C. Maximum exchange bias values exceeding 2000 Oe with reasonably small coercive fields around 600 Oe are achieved for tMnN = 42, 48 nm. The median blocking temperature of those systems is determined to be 180 °C after initial annealing at TA = 525 °C. X-ray diffraction measurements and Auger depth profiling show that the large increase of exchange bias after high-temperature annealing is accompanied by strong nitrogen diffusion into the Ta buffer layer of the stacks. |
| Zusätzliche Informationen: | Art.No.: 056304 |
| Fachbereich(e)/-gebiet(e): | 18 Fachbereich Elektrotechnik und Informationstechnik 18 Fachbereich Elektrotechnik und Informationstechnik > Institut für Mikrowellentechnik und Photonik (IMP) 18 Fachbereich Elektrotechnik und Informationstechnik > Institut für Mikrowellentechnik und Photonik (IMP) > Neue Materialien Elektronik |
| Hinterlegungsdatum: | 14 Jan 2022 10:58 |
| Letzte Änderung: | 14 Jan 2022 10:58 |
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