Dunz, M. ; Matalla-Wagner, T. ; Meinert, M. (2020)
Spin-orbit torque induced electrical switching of antiferromagnetic MnN.
In: Physical Review Research, 2 (1)
doi: 10.1103/PhysRevResearch.2.013347
Artikel, Bibliographie
Kurzbeschreibung (Abstract)
Electrical switching and readout of antiferromagnets allows to exploit the unique properties of antiferromagnetic materials in nanoscopic electronic devices. Here we report experiments on the spin-orbit torque induced electrical switching of a polycrystalline, metallic antiferromagnet with low anisotropy and high Néel temperature. We demonstrate the switching in a Ta/MnN/Pt trilayer system, deposited by (reactive) magnetron sputtering. The dependence of switching amplitude, efficiency, and relaxation are studied with respect to the MnN film thickness, sample temperature, and current density. Our findings are consistent with a thermal activation model and resemble to a large extent previous measurements on CuMnAs and Mn2Au, which exhibit similar switching characteristics due to an intrinsic spin-orbit torque.
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2020 |
| Autor(en): | Dunz, M. ; Matalla-Wagner, T. ; Meinert, M. |
| Art des Eintrags: | Bibliographie |
| Titel: | Spin-orbit torque induced electrical switching of antiferromagnetic MnN |
| Sprache: | Englisch |
| Publikationsjahr: | 20 März 2020 |
| Verlag: | APS physics |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | Physical Review Research |
| Jahrgang/Volume einer Zeitschrift: | 2 |
| (Heft-)Nummer: | 1 |
| DOI: | 10.1103/PhysRevResearch.2.013347 |
| Kurzbeschreibung (Abstract): | Electrical switching and readout of antiferromagnets allows to exploit the unique properties of antiferromagnetic materials in nanoscopic electronic devices. Here we report experiments on the spin-orbit torque induced electrical switching of a polycrystalline, metallic antiferromagnet with low anisotropy and high Néel temperature. We demonstrate the switching in a Ta/MnN/Pt trilayer system, deposited by (reactive) magnetron sputtering. The dependence of switching amplitude, efficiency, and relaxation are studied with respect to the MnN film thickness, sample temperature, and current density. Our findings are consistent with a thermal activation model and resemble to a large extent previous measurements on CuMnAs and Mn2Au, which exhibit similar switching characteristics due to an intrinsic spin-orbit torque. |
| Zusätzliche Informationen: | Art.No.: 013347 |
| Fachbereich(e)/-gebiet(e): | 18 Fachbereich Elektrotechnik und Informationstechnik 18 Fachbereich Elektrotechnik und Informationstechnik > Institut für Mikrowellentechnik und Photonik (IMP) 18 Fachbereich Elektrotechnik und Informationstechnik > Institut für Mikrowellentechnik und Photonik (IMP) > Neue Materialien Elektronik |
| Hinterlegungsdatum: | 14 Jan 2022 10:24 |
| Letzte Änderung: | 14 Jan 2022 10:24 |
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