Matalla-Wagner, Tristan ; Schmalhorst, Jan-Michael ; Reiss, Günter ; Tamura, Nobumichi ; Meinert, Markus (2020)
Resistive contribution in electrical-switching experiments with antiferromagnets.
In: Physical Review Research, 2 (3)
doi: 10.1103/PhysRevResearch.2.033077
Artikel, Bibliographie
Kurzbeschreibung (Abstract)
Recent research demonstrated the electrical switching of antiferromagnets via intrinsic spin-orbit torque or the spin Hall effect of an adjacent heavy metal layer. The electrical readout is typically realized by measuring the transverse anisotropic magnetoresistance at planar cross- or star-shaped devices with four or eight arms, respectively. Depending on the material, the current density necessary to switch the magnetic state can be large, often close to the destruction threshold of the device. We demonstrate that the resulting electrical stress changes the film resistivity locally and thereby breaks the fourfold rotational symmetry of the conductor. This symmetry breaking due to film inhomogeneity produces signals, that resemble the anisotropic magnetoresistance and is experimentally seen as a “saw-tooth”-shaped transverse resistivity. This artifact can persist over many repeats of the switching experiment and is not easily separable from the magnetic contribution. We discuss the origin of the artifact, elucidate the role of the film crystallinity, and propose approaches how to separate the resistive contribution from the magnetic contribution.
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2020 |
| Autor(en): | Matalla-Wagner, Tristan ; Schmalhorst, Jan-Michael ; Reiss, Günter ; Tamura, Nobumichi ; Meinert, Markus |
| Art des Eintrags: | Bibliographie |
| Titel: | Resistive contribution in electrical-switching experiments with antiferromagnets |
| Sprache: | Englisch |
| Publikationsjahr: | 15 Juli 2020 |
| Verlag: | APS physics |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | Physical Review Research |
| Jahrgang/Volume einer Zeitschrift: | 2 |
| (Heft-)Nummer: | 3 |
| DOI: | 10.1103/PhysRevResearch.2.033077 |
| Kurzbeschreibung (Abstract): | Recent research demonstrated the electrical switching of antiferromagnets via intrinsic spin-orbit torque or the spin Hall effect of an adjacent heavy metal layer. The electrical readout is typically realized by measuring the transverse anisotropic magnetoresistance at planar cross- or star-shaped devices with four or eight arms, respectively. Depending on the material, the current density necessary to switch the magnetic state can be large, often close to the destruction threshold of the device. We demonstrate that the resulting electrical stress changes the film resistivity locally and thereby breaks the fourfold rotational symmetry of the conductor. This symmetry breaking due to film inhomogeneity produces signals, that resemble the anisotropic magnetoresistance and is experimentally seen as a “saw-tooth”-shaped transverse resistivity. This artifact can persist over many repeats of the switching experiment and is not easily separable from the magnetic contribution. We discuss the origin of the artifact, elucidate the role of the film crystallinity, and propose approaches how to separate the resistive contribution from the magnetic contribution. |
| Zusätzliche Informationen: | Art.No.: 033077 |
| Fachbereich(e)/-gebiet(e): | 18 Fachbereich Elektrotechnik und Informationstechnik 18 Fachbereich Elektrotechnik und Informationstechnik > Institut für Mikrowellentechnik und Photonik (IMP) 18 Fachbereich Elektrotechnik und Informationstechnik > Institut für Mikrowellentechnik und Photonik (IMP) > Neue Materialien Elektronik |
| Hinterlegungsdatum: | 14 Jan 2022 10:18 |
| Letzte Änderung: | 27 Jan 2022 10:57 |
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