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Ultralow Switching-Current Density in All-Amorphous W−Hf/Co−Fe−B/TaOx Films

Fritz, Katharina ; Neumann, Lukas ; Meinert, Markus (2020)
Ultralow Switching-Current Density in All-Amorphous W−Hf/Co−Fe−B/TaOx Films.
In: Physical Review Applied, 14 (3)
doi: 10.1103/PhysRevApplied.14.034047
Artikel, Bibliographie

Kurzbeschreibung (Abstract)

We study current-induced deterministic magnetization switching and domain-wall motion via polar Kerr microscopy in all-amorphous W66Hf34/Co−Fe−B(CFB)/TaOx with perpendicular magnetic anisotropy and a large spin Hall angle. Investigations of magnetization switching as a function of the in-plane assist field and the current-pulse width yield switching-current densities as low as 3×109A/m2. We accredit this low switching-current density to a low depinning-current density, which is obtained from measurements of domain-wall displacements upon current injection. This correlation is verified by investigations of a Ta/CFB/MgO/Ta reference sample, which shows critical-current densities that are at least one order of magnitude larger.

Typ des Eintrags: Artikel
Erschienen: 2020
Autor(en): Fritz, Katharina ; Neumann, Lukas ; Meinert, Markus
Art des Eintrags: Bibliographie
Titel: Ultralow Switching-Current Density in All-Amorphous W−Hf/Co−Fe−B/TaOx Films
Sprache: Englisch
Publikationsjahr: 17 September 2020
Verlag: APS Publishing
Titel der Zeitschrift, Zeitung oder Schriftenreihe: Physical Review Applied
Jahrgang/Volume einer Zeitschrift: 14
(Heft-)Nummer: 3
DOI: 10.1103/PhysRevApplied.14.034047
Kurzbeschreibung (Abstract):

We study current-induced deterministic magnetization switching and domain-wall motion via polar Kerr microscopy in all-amorphous W66Hf34/Co−Fe−B(CFB)/TaOx with perpendicular magnetic anisotropy and a large spin Hall angle. Investigations of magnetization switching as a function of the in-plane assist field and the current-pulse width yield switching-current densities as low as 3×109A/m2. We accredit this low switching-current density to a low depinning-current density, which is obtained from measurements of domain-wall displacements upon current injection. This correlation is verified by investigations of a Ta/CFB/MgO/Ta reference sample, which shows critical-current densities that are at least one order of magnitude larger.

Zusätzliche Informationen:

Art.No.: 034047

Fachbereich(e)/-gebiet(e): 18 Fachbereich Elektrotechnik und Informationstechnik
18 Fachbereich Elektrotechnik und Informationstechnik > Institut für Mikrowellentechnik und Photonik (IMP)
18 Fachbereich Elektrotechnik und Informationstechnik > Institut für Mikrowellentechnik und Photonik (IMP) > Neue Materialien Elektronik
Hinterlegungsdatum: 14 Jan 2022 10:16
Letzte Änderung: 27 Jan 2022 10:28
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