Dunz, Mareike ; Meinert, Markus (2020)
Role of the Ta buffer layer in Ta/MnN/CoFeB stacks for maximizing exchange bias.
In: Journal of Applied Physics, 128
doi: 10.1063/5.0021226
Artikel, Bibliographie
Kurzbeschreibung (Abstract)
Ta/MnN/CoFeB systems show high exchange bias of about 1800 Oe at room temperature; however, their thermal stability is limited by nitrogen diffusion that occurs during annealing processes [Quarterman et al., Phys. Rev. Mater. 3, 064413 (2019) and Dunz et al., AIP Adv. 8, 056304 (2018)]. In this study, we investigate the consequences of nitrogen diffusion in Ta/MnN/CoFeB exchange bias stacks in dependence on the Ta buffer layer thickness. Furthermore, we test the effects of introducing a TaNx layer between MnN and Ta as a diffusion barrier. Our findings show that the Ta buffer layer plays a decisive role in determining the exchange bias in the Ta/MnN/CoFeB system. It acts as a crystallographic seed layer for better growth of MnN and as a nitrogen sink during the annealing process. We show that both of these functions are crucial for the outcome of high exchange bias. Additionally, our results reveal that the measures decreasing nitrogen diffusion, even though being beneficial in terms of thermal stability, mostly lead to decreased crystallinity and thus weaker exchange bias.
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2020 |
| Autor(en): | Dunz, Mareike ; Meinert, Markus |
| Art des Eintrags: | Bibliographie |
| Titel: | Role of the Ta buffer layer in Ta/MnN/CoFeB stacks for maximizing exchange bias |
| Sprache: | Englisch |
| Publikationsjahr: | 19 Oktober 2020 |
| Verlag: | AIP Publishing |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | Journal of Applied Physics |
| Jahrgang/Volume einer Zeitschrift: | 128 |
| DOI: | 10.1063/5.0021226 |
| Kurzbeschreibung (Abstract): | Ta/MnN/CoFeB systems show high exchange bias of about 1800 Oe at room temperature; however, their thermal stability is limited by nitrogen diffusion that occurs during annealing processes [Quarterman et al., Phys. Rev. Mater. 3, 064413 (2019) and Dunz et al., AIP Adv. 8, 056304 (2018)]. In this study, we investigate the consequences of nitrogen diffusion in Ta/MnN/CoFeB exchange bias stacks in dependence on the Ta buffer layer thickness. Furthermore, we test the effects of introducing a TaNx layer between MnN and Ta as a diffusion barrier. Our findings show that the Ta buffer layer plays a decisive role in determining the exchange bias in the Ta/MnN/CoFeB system. It acts as a crystallographic seed layer for better growth of MnN and as a nitrogen sink during the annealing process. We show that both of these functions are crucial for the outcome of high exchange bias. Additionally, our results reveal that the measures decreasing nitrogen diffusion, even though being beneficial in terms of thermal stability, mostly lead to decreased crystallinity and thus weaker exchange bias. |
| Zusätzliche Informationen: | Art.No.: 153902 |
| Fachbereich(e)/-gebiet(e): | 18 Fachbereich Elektrotechnik und Informationstechnik 18 Fachbereich Elektrotechnik und Informationstechnik > Institut für Mikrowellentechnik und Photonik (IMP) 18 Fachbereich Elektrotechnik und Informationstechnik > Institut für Mikrowellentechnik und Photonik (IMP) > Neue Materialien Elektronik |
| Hinterlegungsdatum: | 14 Jan 2022 10:13 |
| Letzte Änderung: | 27 Jan 2022 09:25 |
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