Deuermeier, Jonas ; Wardenga, Hans F. ; Morasch, Jan ; Siol, Sebastian ; Nandy, Suman ; Calmeiro, Tomás ; Martins, Rodrigo ; Klein, Andreas ; Fortunato, Elvira (2021)
Highly conductive grain boundaries in copper oxide thin films.
In: Journal of Applied Physics, 2016, 119 (23)
doi: 10.26083/tuprints-00019920
Artikel, Zweitveröffentlichung, Verlagsversion
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Kurzbeschreibung (Abstract)
High conductivity in the off-state and low field-effect mobility compared to bulk properties is widely observed in the p-type thin-film transistors of Cu₂O, especially when processed at moderate temperature. This work presents results from in situ conductance measurements at thicknesses from sub-nm to around 250 nm with parallel X-ray photoelectron spectroscopy. An enhanced conductivity at low thickness is explained by the occurrence of Cu(II), which is segregated in the grain boundary and locally causes a conductivity similar to CuO, although the surface of the thick film has Cu₂O stoichiometry. Since grains grow with an increasing film thickness, the effect of an apparent oxygen excess is most pronounced in vicinity to the substrate interface. Electrical properties of Cu₂O grains are at least partially short-circuited by this effect. The study focuses on properties inherent to copper oxide, although interface effects cannot be ruled out. This non-destructive, bottom-up analysis reveals phenomena which are commonly not observable after device fabrication, but clearly dominate electrical properties of polycrystalline thin films.
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2021 |
| Autor(en): | Deuermeier, Jonas ; Wardenga, Hans F. ; Morasch, Jan ; Siol, Sebastian ; Nandy, Suman ; Calmeiro, Tomás ; Martins, Rodrigo ; Klein, Andreas ; Fortunato, Elvira |
| Art des Eintrags: | Zweitveröffentlichung |
| Titel: | Highly conductive grain boundaries in copper oxide thin films |
| Sprache: | Englisch |
| Publikationsjahr: | 2021 |
| Publikationsdatum der Erstveröffentlichung: | 2016 |
| Verlag: | AIP Publishing |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | Journal of Applied Physics |
| Jahrgang/Volume einer Zeitschrift: | 119 |
| (Heft-)Nummer: | 23 |
| Kollation: | 8 Seiten |
| DOI: | 10.26083/tuprints-00019920 |
| URL / URN: | https://tuprints.ulb.tu-darmstadt.de/19920 |
| Zugehörige Links: | |
| Herkunft: | Zweitveröffentlichungsservice |
| Kurzbeschreibung (Abstract): | High conductivity in the off-state and low field-effect mobility compared to bulk properties is widely observed in the p-type thin-film transistors of Cu₂O, especially when processed at moderate temperature. This work presents results from in situ conductance measurements at thicknesses from sub-nm to around 250 nm with parallel X-ray photoelectron spectroscopy. An enhanced conductivity at low thickness is explained by the occurrence of Cu(II), which is segregated in the grain boundary and locally causes a conductivity similar to CuO, although the surface of the thick film has Cu₂O stoichiometry. Since grains grow with an increasing film thickness, the effect of an apparent oxygen excess is most pronounced in vicinity to the substrate interface. Electrical properties of Cu₂O grains are at least partially short-circuited by this effect. The study focuses on properties inherent to copper oxide, although interface effects cannot be ruled out. This non-destructive, bottom-up analysis reveals phenomena which are commonly not observable after device fabrication, but clearly dominate electrical properties of polycrystalline thin films. |
| Status: | Verlagsversion |
| URN: | urn:nbn:de:tuda-tuprints-199208 |
| Sachgruppe der Dewey Dezimalklassifikatin (DDC): | 500 Naturwissenschaften und Mathematik > 530 Physik |
| Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Oberflächenforschung |
| Hinterlegungsdatum: | 16 Nov 2021 12:38 |
| Letzte Änderung: | 17 Nov 2021 06:25 |
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