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Effects of Doping Ni on the Microstructures and Thermoelectric Properties of Co-Excessive NbCoSn Half-Heusler Compounds

Yan, Ruijuan ; Xie, Ruiwen ; Xie, Wenjie ; Shen, Chen ; Li, Wei ; Balke, Benjamin ; Yoon, Songhak ; Zhang, Hongbin ; Weidenkaff, Anke (2021)
Effects of Doping Ni on the Microstructures and Thermoelectric Properties of Co-Excessive NbCoSn Half-Heusler Compounds.
In: ACS Applied Materials & Interfaces, 13 (29)
doi: 10.1021/acsami.1c08127
Artikel, Bibliographie

Kurzbeschreibung (Abstract)

The half-Heusler (HH) compound NbCoSn with 18 valence electrons is a promising thermoelectric (TE) material due to its appropriate electrical properties as well as its suitable thermal and chemical stability. Nowadays, doping/substitution and tailoring of microstructures are common experimental approaches to enhance the TE performance of HH compounds. However, detailed theoretical insights into the effects of doping on the microstructures and TE properties are still missing. In this work, the microstructure of NbCoSn was tailored through precipitating the full-Heusler phases in the matrix by changing the nominal ratio of Co and Ni on the Co sites, focusing on the resulting TE properties. Further, first-principles calculations were employed to understand the relationship between the microstructure and the TE properties from the thermodynamic point of view. Detailed analysis of the electronic structure reveals that the presence of excess Co/Ni contributes to the increasing carrier concentration. Through an increase in the electrical conductivity and a reduction in the thermal conductivity, the TE performance is improved. Therefore, the present work offers a new pathway and insights to enhance the TE properties by modifying the microstructure of HH compounds via tailoring the chemical compositions.

Typ des Eintrags: Artikel
Erschienen: 2021
Autor(en): Yan, Ruijuan ; Xie, Ruiwen ; Xie, Wenjie ; Shen, Chen ; Li, Wei ; Balke, Benjamin ; Yoon, Songhak ; Zhang, Hongbin ; Weidenkaff, Anke
Art des Eintrags: Bibliographie
Titel: Effects of Doping Ni on the Microstructures and Thermoelectric Properties of Co-Excessive NbCoSn Half-Heusler Compounds
Sprache: Englisch
Publikationsjahr: 19 Juli 2021
Verlag: ACS Publications
Titel der Zeitschrift, Zeitung oder Schriftenreihe: ACS Applied Materials & Interfaces
Jahrgang/Volume einer Zeitschrift: 13
(Heft-)Nummer: 29
DOI: 10.1021/acsami.1c08127
Kurzbeschreibung (Abstract):

The half-Heusler (HH) compound NbCoSn with 18 valence electrons is a promising thermoelectric (TE) material due to its appropriate electrical properties as well as its suitable thermal and chemical stability. Nowadays, doping/substitution and tailoring of microstructures are common experimental approaches to enhance the TE performance of HH compounds. However, detailed theoretical insights into the effects of doping on the microstructures and TE properties are still missing. In this work, the microstructure of NbCoSn was tailored through precipitating the full-Heusler phases in the matrix by changing the nominal ratio of Co and Ni on the Co sites, focusing on the resulting TE properties. Further, first-principles calculations were employed to understand the relationship between the microstructure and the TE properties from the thermodynamic point of view. Detailed analysis of the electronic structure reveals that the presence of excess Co/Ni contributes to the increasing carrier concentration. Through an increase in the electrical conductivity and a reduction in the thermal conductivity, the TE performance is improved. Therefore, the present work offers a new pathway and insights to enhance the TE properties by modifying the microstructure of HH compounds via tailoring the chemical compositions.

Freie Schlagworte: thermoelectric materials, half-Heusler, NbCoSn, density functional theory, microstructural modification
Zusätzliche Informationen:

This work is funded by the German Research Foundation (project no. BA 4171/4-1 and 405553726 - TRR 270). We would like to acknowledge Oliver Gutfleisch of TUDa for allowing us to use SEM in his group. The Lichtenberg high-performance computer of TU Darmstadt is gratefully acknowledged for providing computational resources for the EMTO calculations in the present work.

Fachbereich(e)/-gebiet(e): 11 Fachbereich Material- und Geowissenschaften
11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft
11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Theorie magnetischer Materialien
11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Werkstofftechnik und Ressourcenmanagement
Hinterlegungsdatum: 12 Aug 2021 05:55
Letzte Änderung: 14 Sep 2021 06:18
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