Nakamura, Atsutomo ; Fang, Xufei ; Matsubara, Ayaka ; Tochigi, Eita ; Oshima, Yu ; Saito, Tatsushi ; Yokoi, Tatsuya ; Ikuhara, Yuichi ; Matsunaga, Katsuyuki (2021)
Photoindentation : A New Route to Understanding Dislocation
Behavior in Light.
In: Nano Letters, 21 (5)
doi: 10.1021/acs.nanolett.0c04337
Artikel, Bibliographie
Kurzbeschreibung (Abstract)
It was recently found that extremely large plasticity is exhibited in bulk compression of single-crystal ZnS in complete darkness. Such effects are believed to be caused by the interactions between dislocations and photoexcited electrons and/or holes. However, methods for evaluating dislocation behavior in such semiconductors with small dimensions under a particular light condition had not been well established. Here, we propose the “photoindentation” technique to solve this issue by combining nanoscale indentation tests with a fully controlled lighting system. The quantitative data analyses based on this photoindentation approach successfully demonstrate that the first pop-in stress indicating dislocation nucleation near the surface of ZnS clearly increases by light irradiation. Additionally, the room-temperature indentation creep tests show a drastic reduction of the dislocation mobility under light. Our approach demonstrates great potential in understanding the light effects on dislocation nucleation and mobility at the nanoscale, as most advanced technology-related semiconductors are limited in dimensions.
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2021 |
| Autor(en): | Nakamura, Atsutomo ; Fang, Xufei ; Matsubara, Ayaka ; Tochigi, Eita ; Oshima, Yu ; Saito, Tatsushi ; Yokoi, Tatsuya ; Ikuhara, Yuichi ; Matsunaga, Katsuyuki |
| Art des Eintrags: | Bibliographie |
| Titel: | Photoindentation : A New Route to Understanding Dislocation Behavior in Light |
| Sprache: | Englisch |
| Publikationsjahr: | Februar 2021 |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | Nano Letters |
| Jahrgang/Volume einer Zeitschrift: | 21 |
| (Heft-)Nummer: | 5 |
| DOI: | 10.1021/acs.nanolett.0c04337 |
| Kurzbeschreibung (Abstract): | It was recently found that extremely large plasticity is exhibited in bulk compression of single-crystal ZnS in complete darkness. Such effects are believed to be caused by the interactions between dislocations and photoexcited electrons and/or holes. However, methods for evaluating dislocation behavior in such semiconductors with small dimensions under a particular light condition had not been well established. Here, we propose the “photoindentation” technique to solve this issue by combining nanoscale indentation tests with a fully controlled lighting system. The quantitative data analyses based on this photoindentation approach successfully demonstrate that the first pop-in stress indicating dislocation nucleation near the surface of ZnS clearly increases by light irradiation. Additionally, the room-temperature indentation creep tests show a drastic reduction of the dislocation mobility under light. Our approach demonstrates great potential in understanding the light effects on dislocation nucleation and mobility at the nanoscale, as most advanced technology-related semiconductors are limited in dimensions. |
| Freie Schlagworte: | dislocations, flexible semiconductor, transmission electron microscopy, nanoindentation, light control, compound semiconductor |
| Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Nichtmetallisch-Anorganische Werkstoffe |
| Hinterlegungsdatum: | 11 Mär 2021 06:53 |
| Letzte Änderung: | 11 Mär 2021 06:53 |
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