Yadav, Rahul ; Regensburger, Stefan ; Penirschke, Andreas ; Preu, Sascha (2020)
Optimization of GaAs Based Field Effect Transistors for THz Detection at Particle Accelerators.
9th International Beam Instrumentation Conference (IBIC 2020). virtual Conference (14.-18.09.2020)
Konferenzveröffentlichung, Bibliographie
Kurzbeschreibung (Abstract)
For pump probe experiments employing a free-electron laser and a near infrared (NIR) laser, there is no natural locking between the two. Therefore only the repetition rate of the two lasers can be synchronized leading to jitter and drift on the picosecond scale. GaAs-based field-effect transis- tors (FETs) allow for simultaneous detection of the amplitude and timing of picosecond-scale THz and NIR pulses. They cover the whole THz band and beyond up to the MIR (0.1 - 22 THz) with the exception of the GaAs Reststrahlen band. Large-area FETs feature a high damage threshold (>65 kW) and large linearity range. Antenna-coupled FETs show a noise equiv- alent power (NEP) of 250 pW/pHz at 600 GHz. FET based THz detectors can be used both for THz beam on a single pulse level, as well as for the beam diagnosis. For further optimization of the detector for the needs of beam diagnosis with low incident intensity, a more precise modeling of the FET is developed. Therefore, the incoupling of THz to the rectify- ing element is investigated. The S-Parameters of the 2DEG are measured with on-wafer probes up to 67 GHz and de-embedded with on-wafer TRL calibration.
| Typ des Eintrags: | Konferenzveröffentlichung |
|---|---|
| Erschienen: | 2020 |
| Autor(en): | Yadav, Rahul ; Regensburger, Stefan ; Penirschke, Andreas ; Preu, Sascha |
| Art des Eintrags: | Bibliographie |
| Titel: | Optimization of GaAs Based Field Effect Transistors for THz Detection at Particle Accelerators |
| Sprache: | Englisch |
| Publikationsjahr: | 2020 |
| Veranstaltungstitel: | 9th International Beam Instrumentation Conference (IBIC 2020) |
| Veranstaltungsort: | virtual Conference |
| Veranstaltungsdatum: | 14.-18.09.2020 |
| URL / URN: | http://accelconf.web.cern.ch/ibic2020/posters/wepp23_poster.... |
| Kurzbeschreibung (Abstract): | For pump probe experiments employing a free-electron laser and a near infrared (NIR) laser, there is no natural locking between the two. Therefore only the repetition rate of the two lasers can be synchronized leading to jitter and drift on the picosecond scale. GaAs-based field-effect transis- tors (FETs) allow for simultaneous detection of the amplitude and timing of picosecond-scale THz and NIR pulses. They cover the whole THz band and beyond up to the MIR (0.1 - 22 THz) with the exception of the GaAs Reststrahlen band. Large-area FETs feature a high damage threshold (>65 kW) and large linearity range. Antenna-coupled FETs show a noise equiv- alent power (NEP) of 250 pW/pHz at 600 GHz. FET based THz detectors can be used both for THz beam on a single pulse level, as well as for the beam diagnosis. For further optimization of the detector for the needs of beam diagnosis with low incident intensity, a more precise modeling of the FET is developed. Therefore, the incoupling of THz to the rectify- ing element is investigated. The S-Parameters of the 2DEG are measured with on-wafer probes up to 67 GHz and de-embedded with on-wafer TRL calibration. |
| Fachbereich(e)/-gebiet(e): | 18 Fachbereich Elektrotechnik und Informationstechnik 18 Fachbereich Elektrotechnik und Informationstechnik > Institut für Mikrowellentechnik und Photonik (IMP) 18 Fachbereich Elektrotechnik und Informationstechnik > Institut für Mikrowellentechnik und Photonik (IMP) > THz Bauelemente und THz Systeme 18 Fachbereich Elektrotechnik und Informationstechnik > Institut für Mikrowellentechnik und Photonik (IMP) > Terahertz Systems |
| Hinterlegungsdatum: | 05 Mär 2021 07:41 |
| Letzte Änderung: | 04 Jan 2022 13:03 |
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