Benfante, Antonio ; Giambra, Marco A. ; Pernice, Riccardo ; Stivala, Salvatore ; Calandra, Enrico ; Parisi, Antonino ; Cino, Alfonso C. ; Dehm, Simone ; Danneau, Romain ; Krupke, Ralph ; Busacca, Alessandro C. (2018)
Employing Microwave Graphene Field Effect Transistors for Infrared Radiation Detection.
In: IEEE Photonics Journal, 10 (2)
doi: 10.1109/JPHOT.2018.2807923
Artikel, Bibliographie
Kurzbeschreibung (Abstract)
In this work, we investigate the possibility of employing graphene field effect transistors, specifically designed for microwave applications, as infrared detectors for telecom applications. Our devices have been fabricated on a sapphire substrate employing CVD-grown transferred graphene. The roles of both the gate dielectric and the DC bias conditions have been evaluated in order to maximize the infrared generated signal through an experimental investigation of the signal-to-noise ratio dependence on the transistor operating point.
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2018 |
| Autor(en): | Benfante, Antonio ; Giambra, Marco A. ; Pernice, Riccardo ; Stivala, Salvatore ; Calandra, Enrico ; Parisi, Antonino ; Cino, Alfonso C. ; Dehm, Simone ; Danneau, Romain ; Krupke, Ralph ; Busacca, Alessandro C. |
| Art des Eintrags: | Bibliographie |
| Titel: | Employing Microwave Graphene Field Effect Transistors for Infrared Radiation Detection |
| Sprache: | Englisch |
| Publikationsjahr: | 2 April 2018 |
| Verlag: | IEEE |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | IEEE Photonics Journal |
| Jahrgang/Volume einer Zeitschrift: | 10 |
| (Heft-)Nummer: | 2 |
| DOI: | 10.1109/JPHOT.2018.2807923 |
| URL / URN: | https://ieeexplore.ieee.org/document/8299561 |
| Kurzbeschreibung (Abstract): | In this work, we investigate the possibility of employing graphene field effect transistors, specifically designed for microwave applications, as infrared detectors for telecom applications. Our devices have been fabricated on a sapphire substrate employing CVD-grown transferred graphene. The roles of both the gate dielectric and the DC bias conditions have been evaluated in order to maximize the infrared generated signal through an experimental investigation of the signal-to-noise ratio dependence on the transistor operating point. |
| Freie Schlagworte: | Graphene, graphene field effect transistors, infrared detectors,microwave transistors |
| Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Molekulare Nanostrukturen |
| Hinterlegungsdatum: | 20 Nov 2020 12:16 |
| Letzte Änderung: | 20 Nov 2020 12:16 |
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