Giambra, Marco A. ; Benfante, Antonio ; Pernice, Riccardo ; Miseikis, Vaidotas ; Fabbri, Filippo ; Reitz, Christian ; Pernice, Wolfram H. P. ; Krupke, Ralph ; Calandra, Enrico ; Stivala, Salvatore ; Busacca, Alessandro C. ; Danneau, Romain (2019)
Graphene Field-Effect Transistors Employing Different Thin Oxide Films: A Comparative Study.
In: ACS Omega, 4 (1)
doi: 10.1021/acsomega.8b02836
Artikel, Bibliographie
Kurzbeschreibung (Abstract)
In this work, we report on a comparison among graphene field-effect transistors (GFETs) employing different dielectrics as gate layers to evaluate their microwave response. In particular, aluminum oxide (Al_2O_3), titanium oxide (TiO_2), and hafnium oxide (HfO_2) have been tested. GFETs have been fabricated on a single chip and a statistical analysis has been performed on a set of 24 devices for each type of oxide. Direct current and microwave measurements have been carried out on such GFETs and short circuit current gain and maximum available gain have been chosen as quality factors to evaluate their microwave performance. Our results show that all of the devices belonging to a specific group (i.e., with the same oxide) have a well-defined performance curve and that the choice of hafnium oxide represents the best trade-off in terms of dielectric properties. Graphene transistors employing HfO2 as the dielectric layer, in fact, exhibit the best performance in terms of both the cutoff frequency and the maximum frequency of oscillation.
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2019 |
| Autor(en): | Giambra, Marco A. ; Benfante, Antonio ; Pernice, Riccardo ; Miseikis, Vaidotas ; Fabbri, Filippo ; Reitz, Christian ; Pernice, Wolfram H. P. ; Krupke, Ralph ; Calandra, Enrico ; Stivala, Salvatore ; Busacca, Alessandro C. ; Danneau, Romain |
| Art des Eintrags: | Bibliographie |
| Titel: | Graphene Field-Effect Transistors Employing Different Thin Oxide Films: A Comparative Study |
| Sprache: | Englisch |
| Publikationsjahr: | 29 Januar 2019 |
| Verlag: | American Chemical Society |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | ACS Omega |
| Jahrgang/Volume einer Zeitschrift: | 4 |
| (Heft-)Nummer: | 1 |
| DOI: | 10.1021/acsomega.8b02836 |
| URL / URN: | https://pubs.acs.org/doi/10.1021/acsomega.8b02836 |
| Kurzbeschreibung (Abstract): | In this work, we report on a comparison among graphene field-effect transistors (GFETs) employing different dielectrics as gate layers to evaluate their microwave response. In particular, aluminum oxide (Al_2O_3), titanium oxide (TiO_2), and hafnium oxide (HfO_2) have been tested. GFETs have been fabricated on a single chip and a statistical analysis has been performed on a set of 24 devices for each type of oxide. Direct current and microwave measurements have been carried out on such GFETs and short circuit current gain and maximum available gain have been chosen as quality factors to evaluate their microwave performance. Our results show that all of the devices belonging to a specific group (i.e., with the same oxide) have a well-defined performance curve and that the choice of hafnium oxide represents the best trade-off in terms of dielectric properties. Graphene transistors employing HfO2 as the dielectric layer, in fact, exhibit the best performance in terms of both the cutoff frequency and the maximum frequency of oscillation. |
| Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Molekulare Nanostrukturen |
| Hinterlegungsdatum: | 20 Nov 2020 12:01 |
| Letzte Änderung: | 20 Nov 2020 12:01 |
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