Poulain, Raphael ; Proost, Joris ; Klein, Andreas (2019)
Sputter Deposition of Transition Metal Oxides on Silicon: Evidencing the Role of Oxygen Bombardment for Fermi Level Pinning.
In: physica status solidi (a)
doi: 10.1002/pssa.201900730
Artikel, Bibliographie
Dies ist die neueste Version dieses Eintrags.
Kurzbeschreibung (Abstract)
Different magnetron sputtering‐based deposition methods of Nickel Oxide SiO2 passivated Si surfaces are compared. Results highlight that the presence of oxygen in the deposition chamber during reactive sputtering drastically affects the Si/SiO2 interface. An alternative method for the preparation of NiO is the sputtering of metallic nickel in oxygen‐free atmosphere followed by a post‐oxidation of the deposited layer in an oxygen atmosphere without plasma exposition is proposed. We introduce this method as Metal Layer Oxidation (MLO). Using this technique, the barrier height on n‐type silicon increases from ≈0.4 eV for reactively sputtered NiO to more than 0.6 eV for the MLO method. In‐situ photoelectron spectroscopy evidences the formation of an extra electronic state when NiO is reactively sputtered, which is assigned to the intense oxygen ion bombardment of the Si/SiO2 surface during the process. This extra‐electronic state pins the silicon energy bands in an undesirable position. The extra‐electronic state has been associated to oxygen interstitial in the SiO2 implanted during reactive sputtering.
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2019 |
| Autor(en): | Poulain, Raphael ; Proost, Joris ; Klein, Andreas |
| Art des Eintrags: | Bibliographie |
| Titel: | Sputter Deposition of Transition Metal Oxides on Silicon: Evidencing the Role of Oxygen Bombardment for Fermi Level Pinning |
| Sprache: | Englisch |
| Publikationsjahr: | 10 Oktober 2019 |
| Verlag: | Wiley-Blackwell - STM |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | physica status solidi (a) |
| DOI: | 10.1002/pssa.201900730 |
| URL / URN: | https://doi.org/10.1002/pssa.201900730 |
| Zugehörige Links: | |
| Kurzbeschreibung (Abstract): | Different magnetron sputtering‐based deposition methods of Nickel Oxide SiO2 passivated Si surfaces are compared. Results highlight that the presence of oxygen in the deposition chamber during reactive sputtering drastically affects the Si/SiO2 interface. An alternative method for the preparation of NiO is the sputtering of metallic nickel in oxygen‐free atmosphere followed by a post‐oxidation of the deposited layer in an oxygen atmosphere without plasma exposition is proposed. We introduce this method as Metal Layer Oxidation (MLO). Using this technique, the barrier height on n‐type silicon increases from ≈0.4 eV for reactively sputtered NiO to more than 0.6 eV for the MLO method. In‐situ photoelectron spectroscopy evidences the formation of an extra electronic state when NiO is reactively sputtered, which is assigned to the intense oxygen ion bombardment of the Si/SiO2 surface during the process. This extra‐electronic state pins the silicon energy bands in an undesirable position. The extra‐electronic state has been associated to oxygen interstitial in the SiO2 implanted during reactive sputtering. |
| Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Elektronenstruktur von Materialien |
| Hinterlegungsdatum: | 08 Nov 2019 08:32 |
| Letzte Änderung: | 01 Mär 2024 10:55 |
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Verfügbare Versionen dieses Eintrags
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Sputter Deposition of Transition Metal Oxides on Silicon: Evidencing the Role of Oxygen Bombardment for Fermi‐Level Pinning. (deposited 07 Apr 2022 12:16)
- Sputter Deposition of Transition Metal Oxides on Silicon: Evidencing the Role of Oxygen Bombardment for Fermi Level Pinning. (deposited 08 Nov 2019 08:32) [Gegenwärtig angezeigt]
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