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ZnO-Based Quantum Structures for Terahertz Sources

Sirkeli, V. P. and Hartnagel, H. L. and Yilmazoglu, O. and Preu, S.
Tiginyanu, Ion and Sontea, Victor and Railean, Serghei (eds.) (2020):
ZnO-Based Quantum Structures for Terahertz Sources.
In: 4th International Conference on Nanotechnologies and Biomedical Engineering, Chisinau, Republic of Moldova, September 18-21, 2019, ISBN 978-3-030-31866-6,
[Conference or Workshop Item]

Abstract

In this paper we report on the numerical study of the terahertz devices based on metal oxide semiconductors and its application in biology and medicine. We also report on the recent progress of the theoretical and experimental studies of ZnO-based THz quantum cascade lasers (QCLs) and resonant tunneling diodes (RTDs). We show that ZnO-based semiconductor compounds are promising materials for fabrication terahertz sources operating up to room temperature due to their unique properties such as large bandgap and conduction band offset (CBO) energy, high LO-phonon energy, and high resistant to the high breakdown electric field. Moreover, it was established that the ZnO-based terahertz sources can cover the spectral region of 5--12 THz, which is very important for THz imaging and detection of explosive materials, and which could be not covered by conventional GaAs-based terahertz devices. In terms of the reported significant progress in growth of non-polar m-plane ZnO-based heterostructures and devices with low density defects, it is open a wide perspective towards design and fabrication of non-polar m-plane ZnO-based high power terahertz sources with capabilities of operation at room temperature.

Item Type: Conference or Workshop Item
Erschienen: 2020
Editors: Tiginyanu, Ion and Sontea, Victor and Railean, Serghei
Creators: Sirkeli, V. P. and Hartnagel, H. L. and Yilmazoglu, O. and Preu, S.
Title: ZnO-Based Quantum Structures for Terahertz Sources
Language: English
Abstract:

In this paper we report on the numerical study of the terahertz devices based on metal oxide semiconductors and its application in biology and medicine. We also report on the recent progress of the theoretical and experimental studies of ZnO-based THz quantum cascade lasers (QCLs) and resonant tunneling diodes (RTDs). We show that ZnO-based semiconductor compounds are promising materials for fabrication terahertz sources operating up to room temperature due to their unique properties such as large bandgap and conduction band offset (CBO) energy, high LO-phonon energy, and high resistant to the high breakdown electric field. Moreover, it was established that the ZnO-based terahertz sources can cover the spectral region of 5--12 THz, which is very important for THz imaging and detection of explosive materials, and which could be not covered by conventional GaAs-based terahertz devices. In terms of the reported significant progress in growth of non-polar m-plane ZnO-based heterostructures and devices with low density defects, it is open a wide perspective towards design and fabrication of non-polar m-plane ZnO-based high power terahertz sources with capabilities of operation at room temperature.

ISBN: 978-3-030-31866-6
Divisions: 18 Department of Electrical Engineering and Information Technology
18 Department of Electrical Engineering and Information Technology > Microwave Electronics
18 Department of Electrical Engineering and Information Technology > Institute for Microwave Engineering and Photonics
18 Department of Electrical Engineering and Information Technology > Institute for Microwave Engineering and Photonics > Terahertz Systems Technology
Event Title: 4th International Conference on Nanotechnologies and Biomedical Engineering
Event Location: Chisinau, Republic of Moldova
Event Dates: September 18-21, 2019
Date Deposited: 23 Oct 2019 09:43
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