Sirkeli, V. P. and Hartnagel, H. L. and Yilmazoglu, O. and Preu, S. Tiginyanu, Ion and Sontea, Victor and Railean, Serghei (eds.) (2020):
ZnO-Based Quantum Structures for Terahertz Sources.
pp. 219-223, 4th International Conference on Nanotechnologies and Biomedical Engineering, Chisinau, Republic of Moldova, September 18-21, 2019, ISBN 978-3-030-31866-6,
[Conference or Workshop Item]
Abstract
In this paper we report on the numerical study of the terahertz devices based on metal oxide semiconductors and its application in biology and medicine. We also report on the recent progress of the theoretical and experimental studies of ZnO-based THz quantum cascade lasers (QCLs) and resonant tunneling diodes (RTDs). We show that ZnO-based semiconductor compounds are promising materials for fabrication terahertz sources operating up to room temperature due to their unique properties such as large bandgap and conduction band offset (CBO) energy, high LO-phonon energy, and high resistant to the high breakdown electric field. Moreover, it was established that the ZnO-based terahertz sources can cover the spectral region of 5--12 THz, which is very important for THz imaging and detection of explosive materials, and which could be not covered by conventional GaAs-based terahertz devices. In terms of the reported significant progress in growth of non-polar m-plane ZnO-based heterostructures and devices with low density defects, it is open a wide perspective towards design and fabrication of non-polar m-plane ZnO-based high power terahertz sources with capabilities of operation at room temperature.
| Item Type: | Conference or Workshop Item |
|---|---|
| Erschienen: | 2020 |
| Editors: | Tiginyanu, Ion and Sontea, Victor and Railean, Serghei |
| Creators: | Sirkeli, V. P. and Hartnagel, H. L. and Yilmazoglu, O. and Preu, S. |
| Title: | ZnO-Based Quantum Structures for Terahertz Sources |
| Language: | English |
| Abstract: | In this paper we report on the numerical study of the terahertz devices based on metal oxide semiconductors and its application in biology and medicine. We also report on the recent progress of the theoretical and experimental studies of ZnO-based THz quantum cascade lasers (QCLs) and resonant tunneling diodes (RTDs). We show that ZnO-based semiconductor compounds are promising materials for fabrication terahertz sources operating up to room temperature due to their unique properties such as large bandgap and conduction band offset (CBO) energy, high LO-phonon energy, and high resistant to the high breakdown electric field. Moreover, it was established that the ZnO-based terahertz sources can cover the spectral region of 5--12 THz, which is very important for THz imaging and detection of explosive materials, and which could be not covered by conventional GaAs-based terahertz devices. In terms of the reported significant progress in growth of non-polar m-plane ZnO-based heterostructures and devices with low density defects, it is open a wide perspective towards design and fabrication of non-polar m-plane ZnO-based high power terahertz sources with capabilities of operation at room temperature. |
| ISBN: | 978-3-030-31866-6 |
| Divisions: | 18 Department of Electrical Engineering and Information Technology 18 Department of Electrical Engineering and Information Technology > Microwave Electronics 18 Department of Electrical Engineering and Information Technology > Institute for Microwave Engineering and Photonics 18 Department of Electrical Engineering and Information Technology > Institute for Microwave Engineering and Photonics > Terahertz Systems Technology |
| Event Title: | 4th International Conference on Nanotechnologies and Biomedical Engineering |
| Event Location: | Chisinau, Republic of Moldova |
| Event Dates: | September 18-21, 2019 |
| Date Deposited: | 23 Oct 2019 09:43 |
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