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Multi-Level Cell Properties of a Bilayer Cu2O/Al2O3 Resistive Switching Device

Deuermeier, Jonas and Kiazadeh, Asal and Klein, Andreas and Martins, Rodrigo and Fortunato, Elvira (2019):
Multi-Level Cell Properties of a Bilayer Cu2O/Al2O3 Resistive Switching Device.
In: Nanomaterials, 9 (2), MDPI, p. 289, ISSN 2079-4991,
DOI: 10.3390/nano9020289,
[Online-Edition: https://doi.org/10.3390/nano9020289],
[Article]

Abstract

Multi-level resistive switching characteristics of a Cu2O/Al2O3 bilayer device are presented. An oxidation state gradient in copper oxide induced by the fabrication process was found to play a dominant role in defining the multiple resistance states. The highly conductive grain boundaries of the copper oxide—an unusual property for an oxide semiconductor—are discussed for the first time regarding their role in the resistive switching mechanism.

Item Type: Article
Erschienen: 2019
Creators: Deuermeier, Jonas and Kiazadeh, Asal and Klein, Andreas and Martins, Rodrigo and Fortunato, Elvira
Title: Multi-Level Cell Properties of a Bilayer Cu2O/Al2O3 Resistive Switching Device
Language: English
Abstract:

Multi-level resistive switching characteristics of a Cu2O/Al2O3 bilayer device are presented. An oxidation state gradient in copper oxide induced by the fabrication process was found to play a dominant role in defining the multiple resistance states. The highly conductive grain boundaries of the copper oxide—an unusual property for an oxide semiconductor—are discussed for the first time regarding their role in the resistive switching mechanism.

Journal or Publication Title: Nanomaterials
Volume: 9
Number: 2
Publisher: MDPI
Uncontrolled Keywords: resistive switching memories, multi-level cell, copper oxide, grain boundaries, aluminum oxide
Divisions: 11 Department of Materials and Earth Sciences
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences > Material Science > Electronic Structure of Materials (ESM)
Date Deposited: 20 Feb 2019 09:54
DOI: 10.3390/nano9020289
Official URL: https://doi.org/10.3390/nano9020289
Funders: This research was funded by FEDER funds through the COMPETE 2020 Programme and National Funds through FCT—Portuguese Foundation for Science and Technology under project number POCI-01-0145-FEDER-007688, Reference UID/CTM/50025., J.D. acknowledges funding received from the European Union’s Horizon 2020 Research and Innovation Programme through the project HERACLES (Project No. 700395) ., J.D. acknowledges funding received from the German Science Foundation through the collaborative research center SFB 595 (Electrical Fatigue of Functional Materials)., A. Kiazadeh acknowledges FCT for the postdoctoral grant SFRH/BPD/99136/2013 and for funding received through the project NeurOxide (PTDC/NAN-MAT/30812/2017).
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