Deuermeier, Jonas ; Kiazadeh, Asal ; Klein, Andreas ; Martins, Rodrigo ; Fortunato, Elvira (2019)
Multi-Level Cell Properties of a Bilayer Cu2O/Al2O3 Resistive Switching Device.
In: Nanomaterials, 9 (2)
doi: 10.3390/nano9020289
Artikel, Bibliographie
Dies ist die neueste Version dieses Eintrags.
Kurzbeschreibung (Abstract)
Multi-level resistive switching characteristics of a Cu2O/Al2O3 bilayer device are presented. An oxidation state gradient in copper oxide induced by the fabrication process was found to play a dominant role in defining the multiple resistance states. The highly conductive grain boundaries of the copper oxide—an unusual property for an oxide semiconductor—are discussed for the first time regarding their role in the resistive switching mechanism.
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2019 |
| Autor(en): | Deuermeier, Jonas ; Kiazadeh, Asal ; Klein, Andreas ; Martins, Rodrigo ; Fortunato, Elvira |
| Art des Eintrags: | Bibliographie |
| Titel: | Multi-Level Cell Properties of a Bilayer Cu2O/Al2O3 Resistive Switching Device |
| Sprache: | Englisch |
| Publikationsjahr: | Februar 2019 |
| Verlag: | MDPI |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | Nanomaterials |
| Jahrgang/Volume einer Zeitschrift: | 9 |
| (Heft-)Nummer: | 2 |
| DOI: | 10.3390/nano9020289 |
| URL / URN: | https://doi.org/10.3390/nano9020289 |
| Zugehörige Links: | |
| Kurzbeschreibung (Abstract): | Multi-level resistive switching characteristics of a Cu2O/Al2O3 bilayer device are presented. An oxidation state gradient in copper oxide induced by the fabrication process was found to play a dominant role in defining the multiple resistance states. The highly conductive grain boundaries of the copper oxide—an unusual property for an oxide semiconductor—are discussed for the first time regarding their role in the resistive switching mechanism. |
| Freie Schlagworte: | resistive switching memories, multi-level cell, copper oxide, grain boundaries, aluminum oxide |
| Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Elektronenstruktur von Materialien |
| Hinterlegungsdatum: | 20 Feb 2019 09:54 |
| Letzte Änderung: | 03 Jul 2024 02:38 |
| PPN: | |
| Sponsoren: | This research was funded by FEDER funds through the COMPETE 2020 Programme and National Funds through FCT—Portuguese Foundation for Science and Technology under project number POCI-01-0145-FEDER-007688, Reference UID/CTM/50025., J.D. acknowledges funding received from the European Union’s Horizon 2020 Research and Innovation Programme through the project HERACLES (Project No. 700395) ., J.D. acknowledges funding received from the German Science Foundation through the collaborative research center SFB 595 (Electrical Fatigue of Functional Materials)., A. Kiazadeh acknowledges FCT for the postdoctoral grant SFRH/BPD/99136/2013 and for funding received through the project NeurOxide (PTDC/NAN-MAT/30812/2017). |
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| Suche nach Titel in: | TUfind oder in Google |
Verfügbare Versionen dieses Eintrags
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Multi-Level Cell Properties of a Bilayer Cu₂O/Al₂O₃ Resistive Switching Device. (deposited 29 Okt 2021 12:21)
- Multi-Level Cell Properties of a Bilayer Cu2O/Al2O3 Resistive Switching Device. (deposited 20 Feb 2019 09:54) [Gegenwärtig angezeigt]
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