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N-type organic field-effect transistor based on interface doped pentacene

Ahles, Marcus ; Schmechel, Roland ; Seggern, Heinz von :
N-type organic field-effect transistor based on interface doped pentacene.
[Online-Edition: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filety...]
In: Applied Physics Letters, 85 (19) pp. 4499-4501. ISSN 0003-6951
[Artikel], (2004)

Offizielle URL: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filety...

Kurzbeschreibung (Abstract)

The realization of an n-type pentacene field-effect transistor based on interface-doped pentacene is demonstrated, laying a headstone for an organic complementary-metal–oxide–semiconductor technology. The doping is performed by depositing traces of calcium onto the gate insulator before applying the organic semiconductor. Electron field-effect mobilities of 0.19 cm2 V−1 s−1 are achieved. The field effect, i.e., the electron accumulation behavior, is studied by impedance spectroscopy and charge measurements on a metal–insulator–semiconductor (MIS) diode. A good correlation between the physical properties of the transistor and the MIS diode can be reported. A temporal dynamics and a hysteresislike accumulation behavior are observed, both explainable by the influence of deep electron traps.

Typ des Eintrags: Artikel
Erschienen: 2004
Autor(en): Ahles, Marcus ; Schmechel, Roland ; Seggern, Heinz von
Titel: N-type organic field-effect transistor based on interface doped pentacene
Sprache: Englisch
Kurzbeschreibung (Abstract):

The realization of an n-type pentacene field-effect transistor based on interface-doped pentacene is demonstrated, laying a headstone for an organic complementary-metal–oxide–semiconductor technology. The doping is performed by depositing traces of calcium onto the gate insulator before applying the organic semiconductor. Electron field-effect mobilities of 0.19 cm2 V−1 s−1 are achieved. The field effect, i.e., the electron accumulation behavior, is studied by impedance spectroscopy and charge measurements on a metal–insulator–semiconductor (MIS) diode. A good correlation between the physical properties of the transistor and the MIS diode can be reported. A temporal dynamics and a hysteresislike accumulation behavior are observed, both explainable by the influence of deep electron traps.

Titel der Zeitschrift, Zeitung oder Schriftenreihe: Applied Physics Letters
Band: 85
(Heft-)Nummer: 19
Verlag: American Institute of Physics Publishing
Freie Schlagworte: organic semiconductors, MOSFET, electron mobility, electron traps, calcium, silicon, silicon compounds, elemental semiconductors
Fachbereich(e)/-gebiet(e): Fachbereich Material- und Geowissenschaften > Materialwissenschaften > Elektronische Materialeigenschaften
Fachbereich Material- und Geowissenschaften > Materialwissenschaften
Fachbereich Material- und Geowissenschaften
Hinterlegungsdatum: 19 Nov 2008 16:20
Offizielle URL: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filety...
Sponsoren: The authors gratefully acknowledge the funding of the DFG in the framework of the OFET Schwerpunkt Programm ( Schm 1523/3 ) and the project SE 941/2.
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