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N-type organic field-effect transistor based on interface doped pentacene

Ahles, Marcus and Schmechel, Roland and Seggern, Heinz von (2004):
N-type organic field-effect transistor based on interface doped pentacene.
In: Applied Physics Letters, 85 (19), American Institute of Physics Publishing, pp. 4499-4501, ISSN 0003-6951 ,
[Online-Edition: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filety...],
[Article]

Abstract

The realization of an n-type pentacene field-effect transistor based on interface-doped pentacene is demonstrated, laying a headstone for an organic complementary-metal–oxide–semiconductor technology. The doping is performed by depositing traces of calcium onto the gate insulator before applying the organic semiconductor. Electron field-effect mobilities of 0.19 cm2 V−1 s−1 are achieved. The field effect, i.e., the electron accumulation behavior, is studied by impedance spectroscopy and charge measurements on a metal–insulator–semiconductor (MIS) diode. A good correlation between the physical properties of the transistor and the MIS diode can be reported. A temporal dynamics and a hysteresislike accumulation behavior are observed, both explainable by the influence of deep electron traps.

Item Type: Article
Erschienen: 2004
Creators: Ahles, Marcus and Schmechel, Roland and Seggern, Heinz von
Title: N-type organic field-effect transistor based on interface doped pentacene
Language: English
Abstract:

The realization of an n-type pentacene field-effect transistor based on interface-doped pentacene is demonstrated, laying a headstone for an organic complementary-metal–oxide–semiconductor technology. The doping is performed by depositing traces of calcium onto the gate insulator before applying the organic semiconductor. Electron field-effect mobilities of 0.19 cm2 V−1 s−1 are achieved. The field effect, i.e., the electron accumulation behavior, is studied by impedance spectroscopy and charge measurements on a metal–insulator–semiconductor (MIS) diode. A good correlation between the physical properties of the transistor and the MIS diode can be reported. A temporal dynamics and a hysteresislike accumulation behavior are observed, both explainable by the influence of deep electron traps.

Journal or Publication Title: Applied Physics Letters
Volume: 85
Number: 19
Publisher: American Institute of Physics Publishing
Uncontrolled Keywords: organic semiconductors, MOSFET, electron mobility, electron traps, calcium, silicon, silicon compounds, elemental semiconductors
Divisions: 11 Department of Materials and Earth Sciences
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences > Material Science > Electronic Materials
Date Deposited: 19 Nov 2008 16:20
Official URL: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filety...
License: [undefiniert]
Funders: The authors gratefully acknowledge the funding of the DFG in the framework of the OFET Schwerpunkt Programm ( Schm 1523/3 ) and the project SE 941/2.
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