Ahles, Marcus ; Schmechel, Roland ; Seggern, Heinz von (2004)
N-type organic field-effect transistor based on interface doped pentacene.
In: Applied Physics Letters, 85 (19)
Artikel, Bibliographie
Kurzbeschreibung (Abstract)
The realization of an n-type pentacene field-effect transistor based on interface-doped pentacene is demonstrated, laying a headstone for an organic complementary-metal–oxide–semiconductor technology. The doping is performed by depositing traces of calcium onto the gate insulator before applying the organic semiconductor. Electron field-effect mobilities of 0.19 cm2 V−1 s−1 are achieved. The field effect, i.e., the electron accumulation behavior, is studied by impedance spectroscopy and charge measurements on a metal–insulator–semiconductor (MIS) diode. A good correlation between the physical properties of the transistor and the MIS diode can be reported. A temporal dynamics and a hysteresislike accumulation behavior are observed, both explainable by the influence of deep electron traps.
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2004 |
| Autor(en): | Ahles, Marcus ; Schmechel, Roland ; Seggern, Heinz von |
| Art des Eintrags: | Bibliographie |
| Titel: | N-type organic field-effect transistor based on interface doped pentacene |
| Sprache: | Englisch |
| Publikationsjahr: | 8 November 2004 |
| Verlag: | American Institute of Physics Publishing |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | Applied Physics Letters |
| Jahrgang/Volume einer Zeitschrift: | 85 |
| (Heft-)Nummer: | 19 |
| URL / URN: | http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filety... |
| Kurzbeschreibung (Abstract): | The realization of an n-type pentacene field-effect transistor based on interface-doped pentacene is demonstrated, laying a headstone for an organic complementary-metal–oxide–semiconductor technology. The doping is performed by depositing traces of calcium onto the gate insulator before applying the organic semiconductor. Electron field-effect mobilities of 0.19 cm2 V−1 s−1 are achieved. The field effect, i.e., the electron accumulation behavior, is studied by impedance spectroscopy and charge measurements on a metal–insulator–semiconductor (MIS) diode. A good correlation between the physical properties of the transistor and the MIS diode can be reported. A temporal dynamics and a hysteresislike accumulation behavior are observed, both explainable by the influence of deep electron traps. |
| Freie Schlagworte: | organic semiconductors, MOSFET, electron mobility, electron traps, calcium, silicon, silicon compounds, elemental semiconductors |
| Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Elektronische Materialeigenschaften |
| Hinterlegungsdatum: | 19 Nov 2008 16:20 |
| Letzte Änderung: | 20 Feb 2020 13:25 |
| PPN: | |
| Sponsoren: | The authors gratefully acknowledge the funding of the DFG in the framework of the OFET Schwerpunkt Programm ( Schm 1523/3 ) and the project SE 941/2. |
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