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Gallium/Indium-based nitrides and oxynitrides derived from organometallic precursors

Kinski, Isabel and Maurer, Florian and Riedel, Ralf (2004):
Gallium/Indium-based nitrides and oxynitrides derived from organometallic precursors.
In: SILICATES INDUSTRIELS, BELGIAN CERAMIC SOCIETY, 4 AVE GOUVERNEUR CORNEZ, B-7000 MONS, BELGIUM, In: 4th International Symposium on Nitrides, Mons, BELGIUM, NOV 17-19, 2003, In: 69, 5-6 Special Issue 1, [Conference or Workshop Item]

Abstract

Bulk phases of pure GaN, pure InN and solid solutions of compositions InxGa1-xN have been synthesized by pyrolysis of organometallic precursors via ammonolysis. The prior molecular structure of the precursors leads to a good distribution of Ga and In on cation sites in the solid solutions. In GaN and InN with the wurtzite structure, solid solutions follow Vegard's law and therefore the lattice constant a(0) gives information about the degree of cation substitution in the structure. XRD and microscopic methods (SEM and TEM coupled with EDX) were used to investigate synthesized bulk phases. We report here on organometallic precursors suitable for the synthesis of group 13 nitrides. Modification of the precursors with oxygen-containing substances provides appropriate molecules that can be transformed via ammonolysis to oxynitrides.

Item Type: Conference or Workshop Item
Erschienen: 2004
Creators: Kinski, Isabel and Maurer, Florian and Riedel, Ralf
Title: Gallium/Indium-based nitrides and oxynitrides derived from organometallic precursors
Language: English
Abstract:

Bulk phases of pure GaN, pure InN and solid solutions of compositions InxGa1-xN have been synthesized by pyrolysis of organometallic precursors via ammonolysis. The prior molecular structure of the precursors leads to a good distribution of Ga and In on cation sites in the solid solutions. In GaN and InN with the wurtzite structure, solid solutions follow Vegard's law and therefore the lattice constant a(0) gives information about the degree of cation substitution in the structure. XRD and microscopic methods (SEM and TEM coupled with EDX) were used to investigate synthesized bulk phases. We report here on organometallic precursors suitable for the synthesis of group 13 nitrides. Modification of the precursors with oxygen-containing substances provides appropriate molecules that can be transformed via ammonolysis to oxynitrides.

Title of Book: SILICATES INDUSTRIELS
Series Name: 69
Volume: 5-6 Special Issue 1
Publisher: BELGIAN CERAMIC SOCIETY, 4 AVE GOUVERNEUR CORNEZ, B-7000 MONS, BELGIUM
Uncontrolled Keywords: gallium nitride, indium nitride, solid solution, precursor synthesis
Divisions: 11 Department of Materials and Earth Sciences
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences > Material Science > Dispersive Solids
Event Title: 4th International Symposium on Nitrides
Event Location: Mons, BELGIUM
Event Dates: NOV 17-19, 2003
Date Deposited: 17 Dec 2018 16:15
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