Kinski, Isabel ; Maurer, Florian ; Riedel, Ralf (2004)
Gallium/Indium-based nitrides and oxynitrides derived from organometallic precursors.
4th International Symposium on Nitrides. Mons, BELGIUM (17.11.2003-19.11.2003)
Konferenzveröffentlichung, Bibliographie
Kurzbeschreibung (Abstract)
Bulk phases of pure GaN, pure InN and solid solutions of compositions InxGa1-xN have been synthesized by pyrolysis of organometallic precursors via ammonolysis. The prior molecular structure of the precursors leads to a good distribution of Ga and In on cation sites in the solid solutions. In GaN and InN with the wurtzite structure, solid solutions follow Vegard's law and therefore the lattice constant a(0) gives information about the degree of cation substitution in the structure. XRD and microscopic methods (SEM and TEM coupled with EDX) were used to investigate synthesized bulk phases. We report here on organometallic precursors suitable for the synthesis of group 13 nitrides. Modification of the precursors with oxygen-containing substances provides appropriate molecules that can be transformed via ammonolysis to oxynitrides.
| Typ des Eintrags: | Konferenzveröffentlichung |
|---|---|
| Erschienen: | 2004 |
| Autor(en): | Kinski, Isabel ; Maurer, Florian ; Riedel, Ralf |
| Art des Eintrags: | Bibliographie |
| Titel: | Gallium/Indium-based nitrides and oxynitrides derived from organometallic precursors |
| Sprache: | Englisch |
| Publikationsjahr: | Mai 2004 |
| Verlag: | BELGIAN CERAMIC SOCIETY, 4 AVE GOUVERNEUR CORNEZ, B-7000 MONS, BELGIUM |
| Buchtitel: | SILICATES INDUSTRIELS |
| Reihe: | 69 |
| Band einer Reihe: | 5-6 Special Issue 1 |
| Veranstaltungstitel: | 4th International Symposium on Nitrides |
| Veranstaltungsort: | Mons, BELGIUM |
| Veranstaltungsdatum: | 17.11.2003-19.11.2003 |
| Kurzbeschreibung (Abstract): | Bulk phases of pure GaN, pure InN and solid solutions of compositions InxGa1-xN have been synthesized by pyrolysis of organometallic precursors via ammonolysis. The prior molecular structure of the precursors leads to a good distribution of Ga and In on cation sites in the solid solutions. In GaN and InN with the wurtzite structure, solid solutions follow Vegard's law and therefore the lattice constant a(0) gives information about the degree of cation substitution in the structure. XRD and microscopic methods (SEM and TEM coupled with EDX) were used to investigate synthesized bulk phases. We report here on organometallic precursors suitable for the synthesis of group 13 nitrides. Modification of the precursors with oxygen-containing substances provides appropriate molecules that can be transformed via ammonolysis to oxynitrides. |
| Freie Schlagworte: | gallium nitride, indium nitride, solid solution, precursor synthesis |
| Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Disperse Feststoffe |
| Hinterlegungsdatum: | 17 Dez 2018 16:15 |
| Letzte Änderung: | 17 Dez 2018 16:15 |
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