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Synthesis of InxGa1–xN solid solutions

Kinski, Isabel ; Maurer, Florian ; Winkler, Holger ; Riedel, Ralf (2005):
Synthesis of InxGa1–xN solid solutions.
In: Zeitschrift für Kristallographie - Crystalline Materials, 220 (2/3), de Gruyter, ISSN 2194-4946,
DOI: 10.1524/zkri.220.2.196.59133,
[Article]

Abstract

For the growth of group-III nitride thin films as well as GaN and AlN bulk phases precursors are widely used. Here, we introduce bulk phases of pure GaN, InN and solid solutions of InxGa1–xN synthesized by pyrolysis of molecular precursors in ammonia atmosphere. The dimeric [M(NMe2)3]2 (M = Al, Ga) is an oftentimes discussed precursor for conversion into group-III nitrides, while the other here presented gallium and indium amide derivatives have not been reported as appropriate precursors in literature so far. The given molecular structure of the precursors lead to a homogeneous distribution of Gallium and Indium on the cation positions in the solid solutions. GaN and InN and their solid solutions crystallizing in the wurtzite structure type follow Vegard’s law and therefore the lattice constant a0 gives a hint about the degree of cations substitution in the structure. For the investigations of the synthesized bulk phases XRD, SEM and TEM coupled with EDX were used.

Item Type: Article
Erschienen: 2005
Creators: Kinski, Isabel ; Maurer, Florian ; Winkler, Holger ; Riedel, Ralf
Title: Synthesis of InxGa1–xN solid solutions
Language: English
Abstract:

For the growth of group-III nitride thin films as well as GaN and AlN bulk phases precursors are widely used. Here, we introduce bulk phases of pure GaN, InN and solid solutions of InxGa1–xN synthesized by pyrolysis of molecular precursors in ammonia atmosphere. The dimeric [M(NMe2)3]2 (M = Al, Ga) is an oftentimes discussed precursor for conversion into group-III nitrides, while the other here presented gallium and indium amide derivatives have not been reported as appropriate precursors in literature so far. The given molecular structure of the precursors lead to a homogeneous distribution of Gallium and Indium on the cation positions in the solid solutions. GaN and InN and their solid solutions crystallizing in the wurtzite structure type follow Vegard’s law and therefore the lattice constant a0 gives a hint about the degree of cations substitution in the structure. For the investigations of the synthesized bulk phases XRD, SEM and TEM coupled with EDX were used.

Journal or Publication Title: Zeitschrift für Kristallographie - Crystalline Materials
Journal volume: 220
Number: 2/3
Publisher: de Gruyter
Uncontrolled Keywords: Group-III nitrides, Solid solutions, Molecular precursor, Powder diffraction structure analysis, X-ray diffraction
Divisions: 11 Department of Materials and Earth Sciences
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences > Material Science > Dispersive Solids
Date Deposited: 17 Dec 2018 12:26
DOI: 10.1524/zkri.220.2.196.59133
Official URL: https://doi.org/10.1524/zkri.220.2.196.59133
Additional Information:

Dedicated to Professor Dr. Hans-Jörg Deiseroth on the occasion of his 60th birthday.

Funders: The authors thank Dr. Ian McLaren and Dr. Gerhard Miehe for the TEM investigations.
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