Lowther, T. ; Kinski, Isabel ; Wagner, T. ; Riedel, Ralf (2004)
Potential gallium oxynitrides with a derived spinel structure.
In: Journal of Alloys and Compounds, 376 (1-2)
doi: 10.1016/j.jallcom.2003.09.125
Artikel, Bibliographie
Kurzbeschreibung (Abstract)
The structural and electronic properties of a spinel structure of Ga3NO3 are investigated. Comparison is made with zinc-blende and wurtzite GaN as well as with β-Ga2O3, all of which are important direct gap materials. It is suggested that spinel Ga3NO3 may be formed through an alloyed mixture of GaN and Ga2O3. Ga3NO3 is also predicted to be a direct gap material with a value lying close to its nitride counterparts. The calculated lattice constant of the spinel Ga3NO3 is in excellent agreement with the structure of a recently synthesized cubic gallium oxynitride phase with an identified elemental composition near Ga2.8N0.5O3.5.
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2004 |
| Autor(en): | Lowther, T. ; Kinski, Isabel ; Wagner, T. ; Riedel, Ralf |
| Art des Eintrags: | Bibliographie |
| Titel: | Potential gallium oxynitrides with a derived spinel structure |
| Sprache: | Englisch |
| Publikationsjahr: | 11 August 2004 |
| Verlag: | Elsevier Science Publishing |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | Journal of Alloys and Compounds |
| Jahrgang/Volume einer Zeitschrift: | 376 |
| (Heft-)Nummer: | 1-2 |
| DOI: | 10.1016/j.jallcom.2003.09.125 |
| URL / URN: | https://doi.org/10.1016/j.jallcom.2003.09.125 |
| Kurzbeschreibung (Abstract): | The structural and electronic properties of a spinel structure of Ga3NO3 are investigated. Comparison is made with zinc-blende and wurtzite GaN as well as with β-Ga2O3, all of which are important direct gap materials. It is suggested that spinel Ga3NO3 may be formed through an alloyed mixture of GaN and Ga2O3. Ga3NO3 is also predicted to be a direct gap material with a value lying close to its nitride counterparts. The calculated lattice constant of the spinel Ga3NO3 is in excellent agreement with the structure of a recently synthesized cubic gallium oxynitride phase with an identified elemental composition near Ga2.8N0.5O3.5. |
| Freie Schlagworte: | Oxide materials, Semiconductors, Crystal structure, Electronic structure |
| Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Disperse Feststoffe |
| Hinterlegungsdatum: | 17 Dez 2018 11:49 |
| Letzte Änderung: | 30 Jan 2019 11:48 |
| PPN: | |
| Sponsoren: | This work has, in part, been funded through a German-NRF (South Africa) co-operative exchange program. |
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