Saini, S. ; Mele, P. ; Honda, H. ; Suzuki, T. ; Matsumoto, K. ; Miyazaki, K. ; Ichinose, A. ; Molina-Luna, Leopoldo ; Carlini, R. ; Tiwari, A. (2015)
Effect of self-grown seed layer on thermoelectric properties of ZnO thin films.
In: Thin Solid Films, 605
doi: 10.1016/j.tsf.2015.09.060
Artikel, Bibliographie
Kurzbeschreibung (Abstract)
The influence of self-grown seed has been studied on thermoelectric performance of 2% Al-doped ZnO (AZO) thin films. The thickness and orientation of c-axis domains in seed layer change on different substrates while other deposition conditions were kept unchanged for a comparable study. The changes occur because of the different nucleation process of thin film growth on substrate interface and the different lattice mismatch between AZO and substrate. Thin films are grown by pulsed laser deposition on single crystals (SrTiO3 (STO) and Al2O3) and cheap amorphous fused silica (FS) substrates at 400 °C. All thin films are c-axis oriented. The grains are highly connected and elongated in shape which leads to high thermoelectric properties. The thicker self-grown seed layer is found in thin film deposited on FS substrates which shows best performance: electrical conductivity σ = 93 S/cm and Seebeck coefficient S = − 203 μV/K, which estimate power factor (S2.σ) about 0.37 × 10− 3 Wm− 1K− 2 at 600 K. The value of thermal conductivity (κ) was found lowest (4.89 Wm− 1K− 1) for thin film deposited on FS than the other thin films (6.9 Wm− 1K− 1 on Al2O3 and 6.55 Wm− 1K− 1 on STO) at 300 K. The figure of merit, ZT = S2.σ.T/κ, is calculated 0.046 at 600 K, 5 times larger than the ZT of our previous reported bulk AZO, which is promising for practical applications of thermoelectric oxide thin films.
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2015 |
| Autor(en): | Saini, S. ; Mele, P. ; Honda, H. ; Suzuki, T. ; Matsumoto, K. ; Miyazaki, K. ; Ichinose, A. ; Molina-Luna, Leopoldo ; Carlini, R. ; Tiwari, A. |
| Art des Eintrags: | Bibliographie |
| Titel: | Effect of self-grown seed layer on thermoelectric properties of ZnO thin films |
| Sprache: | Englisch |
| Publikationsjahr: | 30 April 2015 |
| Verlag: | Elsevier Science |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | Thin Solid Films |
| Jahrgang/Volume einer Zeitschrift: | 605 |
| DOI: | 10.1016/j.tsf.2015.09.060 |
| Kurzbeschreibung (Abstract): | The influence of self-grown seed has been studied on thermoelectric performance of 2% Al-doped ZnO (AZO) thin films. The thickness and orientation of c-axis domains in seed layer change on different substrates while other deposition conditions were kept unchanged for a comparable study. The changes occur because of the different nucleation process of thin film growth on substrate interface and the different lattice mismatch between AZO and substrate. Thin films are grown by pulsed laser deposition on single crystals (SrTiO3 (STO) and Al2O3) and cheap amorphous fused silica (FS) substrates at 400 °C. All thin films are c-axis oriented. The grains are highly connected and elongated in shape which leads to high thermoelectric properties. The thicker self-grown seed layer is found in thin film deposited on FS substrates which shows best performance: electrical conductivity σ = 93 S/cm and Seebeck coefficient S = − 203 μV/K, which estimate power factor (S2.σ) about 0.37 × 10− 3 Wm− 1K− 2 at 600 K. The value of thermal conductivity (κ) was found lowest (4.89 Wm− 1K− 1) for thin film deposited on FS than the other thin films (6.9 Wm− 1K− 1 on Al2O3 and 6.55 Wm− 1K− 1 on STO) at 300 K. The figure of merit, ZT = S2.σ.T/κ, is calculated 0.046 at 600 K, 5 times larger than the ZT of our previous reported bulk AZO, which is promising for practical applications of thermoelectric oxide thin films. |
| Freie Schlagworte: | Self-grown seed layer, c-axis orientation, Al-doped ZnO thin films, Pulsed laser deposition, Seebeck coefficient, High temperature applications Thermoelectric oxides Figure of merit |
| Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Elektronenmikroskopie |
| Hinterlegungsdatum: | 10 Dez 2018 09:58 |
| Letzte Änderung: | 21 Dez 2018 09:12 |
| PPN: | |
| Sponsoren: | P. M. and S. S. thank ISSD Hiroshima University, Higashi Hiroshima, Japan” for partial financial support under the framework of Japan Science and Technology Agency “program to Disseminate Tenure Tracking System”., P.M. acknowledges partial financial support of Kakenhi (C) grant No. 263901103., Research at the University of Utah was supported by the U. S. National Science Foundation, Grant # 1121252 (NSF-MRSEC). |
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