Xu, Bai-Xiang ; Zhou, Ziqi ; Keil, Peter ; Frömling, Till (2018)
An extended grain boundary barrier height model including
the impact of internal electric field.
In: AIP Advances, 8 (115126)
doi: 10.1063/1.5049473
Artikel, Bibliographie
Kurzbeschreibung (Abstract)
An extended phenomenological model is proposed to rationalize the potential barriers of the varistor like boundaries of piezoelectric semiconductors. This model takes selfconsistently into account the inverse piezoelectric effect of the internal electric field associated with the barrier height at grain boundaries. A double Schottky barrier at a grain boundary gives rise to a strong internal electric field in the depletion layer. Due to the inverse piezoelectric effect, this internal electric field leads to mechanical strain and consequently piezoelectric charge at a grain boundary and also an additional space charge associated with the polarization inhomogeneity. The piezoelectric charges in return impacts the barrier height. Results show that the piezoelectric charge induced by the internal field tends to adjust the grain boundary charge and lowers the barrier height. Furthermore, the barrier height becomes less sensitive to mechanical stress and applied voltage if the influence of the internal field is taken into account. The extended model with the inverse piezoelectric effect of the internal field allows to further elucidate their piezotronic response. The work improves the grain boundary barrier height theory of piezoelectric ceramics and is expected to have general impact on piezotronicsand other junction devices.
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2018 |
| Autor(en): | Xu, Bai-Xiang ; Zhou, Ziqi ; Keil, Peter ; Frömling, Till |
| Art des Eintrags: | Bibliographie |
| Titel: | An extended grain boundary barrier height model including the impact of internal electric field |
| Sprache: | Englisch |
| Publikationsjahr: | 21 November 2018 |
| Verlag: | AMER INST PHYSICS, 1305 WALT WHITMAN RD, STE 300, MELVILLE, NY 11747-4501 USA |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | AIP Advances |
| Jahrgang/Volume einer Zeitschrift: | 8 |
| (Heft-)Nummer: | 115126 |
| DOI: | 10.1063/1.5049473 |
| Kurzbeschreibung (Abstract): | An extended phenomenological model is proposed to rationalize the potential barriers of the varistor like boundaries of piezoelectric semiconductors. This model takes selfconsistently into account the inverse piezoelectric effect of the internal electric field associated with the barrier height at grain boundaries. A double Schottky barrier at a grain boundary gives rise to a strong internal electric field in the depletion layer. Due to the inverse piezoelectric effect, this internal electric field leads to mechanical strain and consequently piezoelectric charge at a grain boundary and also an additional space charge associated with the polarization inhomogeneity. The piezoelectric charges in return impacts the barrier height. Results show that the piezoelectric charge induced by the internal field tends to adjust the grain boundary charge and lowers the barrier height. Furthermore, the barrier height becomes less sensitive to mechanical stress and applied voltage if the influence of the internal field is taken into account. The extended model with the inverse piezoelectric effect of the internal field allows to further elucidate their piezotronic response. The work improves the grain boundary barrier height theory of piezoelectric ceramics and is expected to have general impact on piezotronicsand other junction devices. |
| Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Mechanik Funktionaler Materialien 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Nichtmetallisch-Anorganische Werkstoffe |
| Hinterlegungsdatum: | 22 Nov 2018 10:46 |
| Letzte Änderung: | 26 Jan 2024 09:21 |
| PPN: | |
| Sponsoren: | The funding of German Science Foundation to the project Xu121/6-1 and RO954/28-1 within the PAK928 is acknowledged |
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