TU Darmstadt / ULB / TUbiblio

Influence of metal/semiconductor interface on attainable piezoelectric and energy harvesting properties of ZnO

Novak, Nikola and Keil, Peter and Frömling, Till and Schader, Florian H. and Martin, Alexander and Webber, Kyle G. and Rödel, Jürgen (2019):
Influence of metal/semiconductor interface on attainable piezoelectric and energy harvesting properties of ZnO.
In: Acta Materialia, Elsevier, pp. 277-283, 162, (2019), ISSN 13596454, DOI: 10.1016/j.actamat.2018.10.008, [Article]

Abstract

The piezoelectric coefficient is a measure to quantify the potential use of a material in energy harvesting and sensor applications. High concentration of free charge carriers in piezoelectric materials can significantly impede the use of generated piezoelectric charge. In this study, undoped semiconducting ZnO single crystals with both Ohmic and Schottky contacts were prepared to quantify the effective piezoelectric response at temperatures from 20°C to -140°C and frequencies of mechanical loading from 0.5 Hz to 160 Hz. It was demonstrated that the formation of an electrostatic potential barrier at the metal-semiconductor interface increases the overall resistance, which provides access to unbiased piezoelectric coefficients of ZnO single crystals even at room temperature. These findings were verified using semiconducting ZnO for energy harvesting at room temperature and relatively low loading frequency.

Item Type: Article
Erschienen: 2019
Creators: Novak, Nikola and Keil, Peter and Frömling, Till and Schader, Florian H. and Martin, Alexander and Webber, Kyle G. and Rödel, Jürgen
Title: Influence of metal/semiconductor interface on attainable piezoelectric and energy harvesting properties of ZnO
Language: English
Abstract:

The piezoelectric coefficient is a measure to quantify the potential use of a material in energy harvesting and sensor applications. High concentration of free charge carriers in piezoelectric materials can significantly impede the use of generated piezoelectric charge. In this study, undoped semiconducting ZnO single crystals with both Ohmic and Schottky contacts were prepared to quantify the effective piezoelectric response at temperatures from 20°C to -140°C and frequencies of mechanical loading from 0.5 Hz to 160 Hz. It was demonstrated that the formation of an electrostatic potential barrier at the metal-semiconductor interface increases the overall resistance, which provides access to unbiased piezoelectric coefficients of ZnO single crystals even at room temperature. These findings were verified using semiconducting ZnO for energy harvesting at room temperature and relatively low loading frequency.

Journal or Publication Title: Acta Materialia
Volume: 162
Number: 2019
Publisher: Elsevier
Uncontrolled Keywords: Semiconductor Piezoelectricity Piezotronics Energy harvesting
Divisions: 11 Department of Materials and Earth Sciences
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences > Material Science > Nonmetallic-Inorganic Materials
Date Deposited: 12 Oct 2018 07:13
DOI: 10.1016/j.actamat.2018.10.008
Export:

Optionen (nur für Redakteure)

View Item View Item