Novak, Nikola ; Keil, Peter ; Frömling, Till ; Schader, Florian H. ; Martin, Alexander ; Webber, Kyle G. ; Rödel, Jürgen (2019)
Influence of metal/semiconductor interface on attainable piezoelectric
and energy harvesting properties of ZnO.
In: Acta Materialia, 162 (2019)
doi: 10.1016/j.actamat.2018.10.008
Artikel, Bibliographie
Kurzbeschreibung (Abstract)
The piezoelectric coefficient is a measure to quantify the potential use of a material in energy harvesting and sensor applications. High concentration of free charge carriers in piezoelectric materials can significantly impede the use of generated piezoelectric charge. In this study, undoped semiconducting ZnO single crystals with both Ohmic and Schottky contacts were prepared to quantify the effective piezoelectric response at temperatures from 20°C to -140°C and frequencies of mechanical loading from 0.5 Hz to 160 Hz. It was demonstrated that the formation of an electrostatic potential barrier at the metal-semiconductor interface increases the overall resistance, which provides access to unbiased piezoelectric coefficients of ZnO single crystals even at room temperature. These findings were verified using semiconducting ZnO for energy harvesting at room temperature and relatively low loading frequency.
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2019 |
| Autor(en): | Novak, Nikola ; Keil, Peter ; Frömling, Till ; Schader, Florian H. ; Martin, Alexander ; Webber, Kyle G. ; Rödel, Jürgen |
| Art des Eintrags: | Bibliographie |
| Titel: | Influence of metal/semiconductor interface on attainable piezoelectric and energy harvesting properties of ZnO |
| Sprache: | Englisch |
| Publikationsjahr: | 1 Januar 2019 |
| Verlag: | Elsevier |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | Acta Materialia |
| Jahrgang/Volume einer Zeitschrift: | 162 |
| (Heft-)Nummer: | 2019 |
| DOI: | 10.1016/j.actamat.2018.10.008 |
| Kurzbeschreibung (Abstract): | The piezoelectric coefficient is a measure to quantify the potential use of a material in energy harvesting and sensor applications. High concentration of free charge carriers in piezoelectric materials can significantly impede the use of generated piezoelectric charge. In this study, undoped semiconducting ZnO single crystals with both Ohmic and Schottky contacts were prepared to quantify the effective piezoelectric response at temperatures from 20°C to -140°C and frequencies of mechanical loading from 0.5 Hz to 160 Hz. It was demonstrated that the formation of an electrostatic potential barrier at the metal-semiconductor interface increases the overall resistance, which provides access to unbiased piezoelectric coefficients of ZnO single crystals even at room temperature. These findings were verified using semiconducting ZnO for energy harvesting at room temperature and relatively low loading frequency. |
| Freie Schlagworte: | Semiconductor Piezoelectricity Piezotronics Energy harvesting |
| Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Nichtmetallisch-Anorganische Werkstoffe |
| Hinterlegungsdatum: | 12 Okt 2018 07:13 |
| Letzte Änderung: | 26 Nov 2018 09:43 |
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