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1550-nm Driven ErAs: In (Al) GaAs Photoconductor-Based Terahertz Time Domain System with 6.5 THz Bandwidth

Nandi, U. and Norman, J. C. and Gossard, A. C. and Lu, H. and Preu, Sascha (2018):
1550-nm Driven ErAs: In (Al) GaAs Photoconductor-Based Terahertz Time Domain System with 6.5 THz Bandwidth.
In: Journal of Infrared, Millimeter, and Terahertz Waves, Springer US, pp. 340-348, 39, (4), ISSN 1866-6892,
DOI: 10.1007/s10762-018-0471-9,
[Online-Edition: https://link.springer.com/article/10.1007/s10762-018-0471-9],
[Article]

Item Type: Article
Erschienen: 2018
Creators: Nandi, U. and Norman, J. C. and Gossard, A. C. and Lu, H. and Preu, Sascha
Title: 1550-nm Driven ErAs: In (Al) GaAs Photoconductor-Based Terahertz Time Domain System with 6.5 THz Bandwidth
Language: English
Journal or Publication Title: Journal of Infrared, Millimeter, and Terahertz Waves
Volume: 39
Number: 4
Publisher: Springer US
Divisions: 18 Department of Electrical Engineering and Information Technology
18 Department of Electrical Engineering and Information Technology > Institute for Microwave Engineering and Photonics
18 Department of Electrical Engineering and Information Technology > Institute for Microwave Engineering and Photonics > Terahertz Systems Technology
Date Deposited: 11 Oct 2018 15:27
DOI: 10.1007/s10762-018-0471-9
Official URL: https://link.springer.com/article/10.1007/s10762-018-0471-9
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