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1550-nm Driven ErAs: In (Al) GaAs Photoconductor-Based Terahertz Time Domain System with 6.5 THz Bandwidth

Nandi, U. ; Norman, J. C. ; Gossard, A. C. ; Lu, H. ; Preu, Sascha (2018):
1550-nm Driven ErAs: In (Al) GaAs Photoconductor-Based Terahertz Time Domain System with 6.5 THz Bandwidth.
In: Journal of Infrared, Millimeter, and Terahertz Waves, 39 (4), pp. 340-348. Springer Nature, ISSN 1866-6892,
DOI: 10.1007/s10762-018-0471-9,
[Article]

Item Type: Article
Erschienen: 2018
Creators: Nandi, U. ; Norman, J. C. ; Gossard, A. C. ; Lu, H. ; Preu, Sascha
Title: 1550-nm Driven ErAs: In (Al) GaAs Photoconductor-Based Terahertz Time Domain System with 6.5 THz Bandwidth
Language: English
Journal or Publication Title: Journal of Infrared, Millimeter, and Terahertz Waves
Journal volume: 39
Number: 4
Publisher: Springer Nature
Divisions: 18 Department of Electrical Engineering and Information Technology
18 Department of Electrical Engineering and Information Technology > Institute for Microwave Engineering and Photonics (IMP)
18 Department of Electrical Engineering and Information Technology > Institute for Microwave Engineering and Photonics (IMP) > Terahertz Devices and Systems
18 Department of Electrical Engineering and Information Technology > Institute for Microwave Engineering and Photonics (IMP) > Terahertz Systems Technology
Date Deposited: 11 Oct 2018 15:27
DOI: 10.1007/s10762-018-0471-9
Official URL: https://link.springer.com/article/10.1007/s10762-018-0471-9
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