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Impact of mechanical stress on barium titanate-based positive temperature coefficient resistive material

Pu, Yongping and Lei, Zhang and Keil, Peter and Novak, Nikola and Frömling, Till (2018):
Impact of mechanical stress on barium titanate-based positive temperature coefficient resistive material.
In: Journal of Materials Science, pp. 16243-16251, 2018, (53), ISSN 0022-2461, DOI: 10.1007/s10853-018-2802-6, [Article]

Abstract

The sensitivity toward mechanical stress of barium titanate-based positive temperature coefficient resistor material was investigated by determining the resistance change with application of uniaxial stress from room temperature to 200 °C, which is well above the Curie temperature TC. Using the Landau–Ginsburg–Devonshire theory the resistance increases in the paraelectric state, the negligible impact of stress close to TC and the observed increase in TC with increasing stress could be rationalized. For the ferroelectric state, the stressrelated resistance increase was attributed to ferroelasticity, a change in bulk permittivity and interfacial stress inducing a piezoelectric potential. The obtained results are also discussed with respect to recent endeavors to tune properties of potential barriers in piezoelectric semiconductors by mechanical stress.

Item Type: Article
Erschienen: 2018
Creators: Pu, Yongping and Lei, Zhang and Keil, Peter and Novak, Nikola and Frömling, Till
Title: Impact of mechanical stress on barium titanate-based positive temperature coefficient resistive material
Language: English
Abstract:

The sensitivity toward mechanical stress of barium titanate-based positive temperature coefficient resistor material was investigated by determining the resistance change with application of uniaxial stress from room temperature to 200 °C, which is well above the Curie temperature TC. Using the Landau–Ginsburg–Devonshire theory the resistance increases in the paraelectric state, the negligible impact of stress close to TC and the observed increase in TC with increasing stress could be rationalized. For the ferroelectric state, the stressrelated resistance increase was attributed to ferroelasticity, a change in bulk permittivity and interfacial stress inducing a piezoelectric potential. The obtained results are also discussed with respect to recent endeavors to tune properties of potential barriers in piezoelectric semiconductors by mechanical stress.

Journal or Publication Title: Journal of Materials Science
Volume: 2018
Number: 53
Divisions: 11 Department of Materials and Earth Sciences
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences > Material Science > Nonmetallic-Inorganic Materials
Date Deposited: 01 Oct 2018 09:11
DOI: 10.1007/s10853-018-2802-6
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