Pu, Yongping ; Lei, Zhang ; Keil, Peter ; Novak, Nikola ; Frömling, Till (2018)
Impact of mechanical stress on barium titanate-based positive temperature coefficient resistive material.
In: Journal of Materials Science, 2018 (53)
doi: 10.1007/s10853-018-2802-6
Artikel, Bibliographie
Kurzbeschreibung (Abstract)
The sensitivity toward mechanical stress of barium titanate-based positive temperature coefficient resistor material was investigated by determining the resistance change with application of uniaxial stress from room temperature to 200 °C, which is well above the Curie temperature TC. Using the Landau–Ginsburg–Devonshire theory the resistance increases in the paraelectric state, the negligible impact of stress close to TC and the observed increase in TC with increasing stress could be rationalized. For the ferroelectric state, the stressrelated resistance increase was attributed to ferroelasticity, a change in bulk permittivity and interfacial stress inducing a piezoelectric potential. The obtained results are also discussed with respect to recent endeavors to tune properties of potential barriers in piezoelectric semiconductors by mechanical stress.
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2018 |
| Autor(en): | Pu, Yongping ; Lei, Zhang ; Keil, Peter ; Novak, Nikola ; Frömling, Till |
| Art des Eintrags: | Bibliographie |
| Titel: | Impact of mechanical stress on barium titanate-based positive temperature coefficient resistive material |
| Sprache: | Englisch |
| Publikationsjahr: | 1 Oktober 2018 |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | Journal of Materials Science |
| Jahrgang/Volume einer Zeitschrift: | 2018 |
| (Heft-)Nummer: | 53 |
| DOI: | 10.1007/s10853-018-2802-6 |
| Kurzbeschreibung (Abstract): | The sensitivity toward mechanical stress of barium titanate-based positive temperature coefficient resistor material was investigated by determining the resistance change with application of uniaxial stress from room temperature to 200 °C, which is well above the Curie temperature TC. Using the Landau–Ginsburg–Devonshire theory the resistance increases in the paraelectric state, the negligible impact of stress close to TC and the observed increase in TC with increasing stress could be rationalized. For the ferroelectric state, the stressrelated resistance increase was attributed to ferroelasticity, a change in bulk permittivity and interfacial stress inducing a piezoelectric potential. The obtained results are also discussed with respect to recent endeavors to tune properties of potential barriers in piezoelectric semiconductors by mechanical stress. |
| Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Nichtmetallisch-Anorganische Werkstoffe |
| Hinterlegungsdatum: | 01 Okt 2018 09:11 |
| Letzte Änderung: | 01 Okt 2018 09:11 |
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