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Energy-Band Alignment of BiVO4 from Photoelectron Spectroscopy of Solid-State Interfaces

Hermans, Yannick and Klein, Andreas and Ellmer, Klaus and van de Krol, Roel and Toupance, Thierry and Jaegermann, Wolfram :
Energy-Band Alignment of BiVO4 from Photoelectron Spectroscopy of Solid-State Interfaces.
[Online-Edition: https://doi.org/10.1021/acs.jpcc.8b06241]
In: The Journal of Physical Chemistry C, 122 pp. 20861-20870. ISSN 1932-7447
[Article] , (2018)

Official URL: https://doi.org/10.1021/acs.jpcc.8b06241

Abstract

The interface formation and energy-band alignment at interfaces between polycrystalline BiVO4 and high-work-function RuO2 and low-work-function Sn-doped In2O3 (indium tin oxide) have been studied using photoelectron spectroscopy with in situ thin-film deposition of the contact materials. The Schottky barrier heights for both contact films differ by 0.85 eV, which is smaller than the difference in work function and the differences observed for other semiconducting oxides, indicating a partial Fermi-level pinning. On the basis of the present results and the comparison with other photoelectrochemically active oxides, the differences of band alignment obtained from solid/electrolyte and from solid/solid interfaces, which can exhibit substantial differences, are discussed.

Item Type: Article
Erschienen: 2018
Creators: Hermans, Yannick and Klein, Andreas and Ellmer, Klaus and van de Krol, Roel and Toupance, Thierry and Jaegermann, Wolfram
Title: Energy-Band Alignment of BiVO4 from Photoelectron Spectroscopy of Solid-State Interfaces
Language: English
Abstract:

The interface formation and energy-band alignment at interfaces between polycrystalline BiVO4 and high-work-function RuO2 and low-work-function Sn-doped In2O3 (indium tin oxide) have been studied using photoelectron spectroscopy with in situ thin-film deposition of the contact materials. The Schottky barrier heights for both contact films differ by 0.85 eV, which is smaller than the difference in work function and the differences observed for other semiconducting oxides, indicating a partial Fermi-level pinning. On the basis of the present results and the comparison with other photoelectrochemically active oxides, the differences of band alignment obtained from solid/electrolyte and from solid/solid interfaces, which can exhibit substantial differences, are discussed.

Journal or Publication Title: The Journal of Physical Chemistry C
Volume: 122
Divisions: 11 Department of Materials and Earth Sciences
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences > Material Science > Surface Science
Date Deposited: 07 Sep 2018 07:54
DOI: 10.1021/acs.jpcc.8b06241
Official URL: https://doi.org/10.1021/acs.jpcc.8b06241
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