TU Darmstadt / ULB / TUbiblio

Energy-Band Alignment of BiVO4 from Photoelectron Spectroscopy of Solid-State Interfaces

Hermans, Yannick ; Klein, Andreas ; Ellmer, Klaus ; van de Krol, Roel ; Toupance, Thierry ; Jaegermann, Wolfram :
Energy-Band Alignment of BiVO4 from Photoelectron Spectroscopy of Solid-State Interfaces.
[Online-Edition: https://doi.org/10.1021/acs.jpcc.8b06241]
In: The Journal of Physical Chemistry C, 122 S. 20861-20870. ISSN 1932-7447
[Artikel] , (2018)

Offizielle URL: https://doi.org/10.1021/acs.jpcc.8b06241

Kurzbeschreibung (Abstract)

The interface formation and energy-band alignment at interfaces between polycrystalline BiVO4 and high-work-function RuO2 and low-work-function Sn-doped In2O3 (indium tin oxide) have been studied using photoelectron spectroscopy with in situ thin-film deposition of the contact materials. The Schottky barrier heights for both contact films differ by 0.85 eV, which is smaller than the difference in work function and the differences observed for other semiconducting oxides, indicating a partial Fermi-level pinning. On the basis of the present results and the comparison with other photoelectrochemically active oxides, the differences of band alignment obtained from solid/electrolyte and from solid/solid interfaces, which can exhibit substantial differences, are discussed.

Typ des Eintrags: Artikel
Erschienen: 2018
Autor(en): Hermans, Yannick ; Klein, Andreas ; Ellmer, Klaus ; van de Krol, Roel ; Toupance, Thierry ; Jaegermann, Wolfram
Titel: Energy-Band Alignment of BiVO4 from Photoelectron Spectroscopy of Solid-State Interfaces
Sprache: Englisch
Kurzbeschreibung (Abstract):

The interface formation and energy-band alignment at interfaces between polycrystalline BiVO4 and high-work-function RuO2 and low-work-function Sn-doped In2O3 (indium tin oxide) have been studied using photoelectron spectroscopy with in situ thin-film deposition of the contact materials. The Schottky barrier heights for both contact films differ by 0.85 eV, which is smaller than the difference in work function and the differences observed for other semiconducting oxides, indicating a partial Fermi-level pinning. On the basis of the present results and the comparison with other photoelectrochemically active oxides, the differences of band alignment obtained from solid/electrolyte and from solid/solid interfaces, which can exhibit substantial differences, are discussed.

Titel der Zeitschrift, Zeitung oder Schriftenreihe: The Journal of Physical Chemistry C
Band: 122
Fachbereich(e)/-gebiet(e): 11 Fachbereich Material- und Geowissenschaften
11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft
11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Oberflächenforschung
Hinterlegungsdatum: 07 Sep 2018 07:54
DOI: 10.1021/acs.jpcc.8b06241
Offizielle URL: https://doi.org/10.1021/acs.jpcc.8b06241
Export:

Optionen (nur für Redakteure)

Eintrag anzeigen Eintrag anzeigen