Hermans, Yannick ; Klein, Andreas ; Ellmer, Klaus ; Krol, Roel van de ; Toupance, Thierry ; Jaegermann, Wolfram (2018)
Energy-Band Alignment of BiVO4 from Photoelectron Spectroscopy of Solid-State Interfaces.
In: The Journal of Physical Chemistry C, 122
doi: 10.1021/acs.jpcc.8b06241
Artikel, Bibliographie
Kurzbeschreibung (Abstract)
The interface formation and energy-band alignment at interfaces between polycrystalline BiVO4 and high-work-function RuO2 and low-work-function Sn-doped In2O3 (indium tin oxide) have been studied using photoelectron spectroscopy with in situ thin-film deposition of the contact materials. The Schottky barrier heights for both contact films differ by 0.85 eV, which is smaller than the difference in work function and the differences observed for other semiconducting oxides, indicating a partial Fermi-level pinning. On the basis of the present results and the comparison with other photoelectrochemically active oxides, the differences of band alignment obtained from solid/electrolyte and from solid/solid interfaces, which can exhibit substantial differences, are discussed.
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2018 |
| Autor(en): | Hermans, Yannick ; Klein, Andreas ; Ellmer, Klaus ; Krol, Roel van de ; Toupance, Thierry ; Jaegermann, Wolfram |
| Art des Eintrags: | Bibliographie |
| Titel: | Energy-Band Alignment of BiVO4 from Photoelectron Spectroscopy of Solid-State Interfaces |
| Sprache: | Englisch |
| Publikationsjahr: | 12 August 2018 |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | The Journal of Physical Chemistry C |
| Jahrgang/Volume einer Zeitschrift: | 122 |
| DOI: | 10.1021/acs.jpcc.8b06241 |
| URL / URN: | https://doi.org/10.1021/acs.jpcc.8b06241 |
| Kurzbeschreibung (Abstract): | The interface formation and energy-band alignment at interfaces between polycrystalline BiVO4 and high-work-function RuO2 and low-work-function Sn-doped In2O3 (indium tin oxide) have been studied using photoelectron spectroscopy with in situ thin-film deposition of the contact materials. The Schottky barrier heights for both contact films differ by 0.85 eV, which is smaller than the difference in work function and the differences observed for other semiconducting oxides, indicating a partial Fermi-level pinning. On the basis of the present results and the comparison with other photoelectrochemically active oxides, the differences of band alignment obtained from solid/electrolyte and from solid/solid interfaces, which can exhibit substantial differences, are discussed. |
| Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Oberflächenforschung |
| Hinterlegungsdatum: | 07 Sep 2018 07:54 |
| Letzte Änderung: | 23 Jul 2021 15:18 |
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