Prasad, Ravi Mohan ; Lauterbach, Stefan ; Kleebe, Hans-Joachim ; Merdrignac-Conanec, Odile ; Barsan, Nicolae ; Weimar, Udo ; Gurlo, Aleksander (2017)
Response of Gallium Nitride Chemiresistors to Carbon Monoxide is Due to Oxygen Contamination.
In: ACS Sensors, 2 (6)
doi: 10.1021/acssensors.7b00064
Artikel, Bibliographie
Kurzbeschreibung (Abstract)
We report on the influence of oxygen impurities on the gas sensing properties of gallium nitride (GaN) chemiresistors. As shown by XRD, elemental analysis, and TEM characterization, surface oxidation of GaN for example, upon contact to ambient air atmosphere creates an oxidative amorphous layer which provides the sites for the sensing toward CO. Treating this powder under dry ammonia at 800 degrees C converts the oxide layer in nitride, and consequently the sensing performance toward CO is dramatically reduced for ammonia treated GaN gas sensors. Hence the response of GaN sensors to CO is caused by oxygen in the form of amorphous surface oxide or oxynitride.
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2017 |
| Autor(en): | Prasad, Ravi Mohan ; Lauterbach, Stefan ; Kleebe, Hans-Joachim ; Merdrignac-Conanec, Odile ; Barsan, Nicolae ; Weimar, Udo ; Gurlo, Aleksander |
| Art des Eintrags: | Bibliographie |
| Titel: | Response of Gallium Nitride Chemiresistors to Carbon Monoxide is Due to Oxygen Contamination |
| Sprache: | Englisch |
| Publikationsjahr: | Juni 2017 |
| Verlag: | American Chemical Society |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | ACS Sensors |
| Jahrgang/Volume einer Zeitschrift: | 2 |
| (Heft-)Nummer: | 6 |
| DOI: | 10.1021/acssensors.7b00064 |
| URL / URN: | https://pubs.acs.org/doi/10.1021/acssensors.7b00064 |
| Kurzbeschreibung (Abstract): | We report on the influence of oxygen impurities on the gas sensing properties of gallium nitride (GaN) chemiresistors. As shown by XRD, elemental analysis, and TEM characterization, surface oxidation of GaN for example, upon contact to ambient air atmosphere creates an oxidative amorphous layer which provides the sites for the sensing toward CO. Treating this powder under dry ammonia at 800 degrees C converts the oxide layer in nitride, and consequently the sensing performance toward CO is dramatically reduced for ammonia treated GaN gas sensors. Hence the response of GaN sensors to CO is caused by oxygen in the form of amorphous surface oxide or oxynitride. |
| Freie Schlagworte: | Chemiresistors, gallium nitride, carbon monoxide, oxygen, gallium oxide, gas sensors, in-situ, films, powders |
| Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften 11 Fachbereich Material- und Geowissenschaften > Geowissenschaften 11 Fachbereich Material- und Geowissenschaften > Geowissenschaften > Fachgebiet Geomaterialwissenschaft 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Disperse Feststoffe |
| Hinterlegungsdatum: | 22 Aug 2018 09:39 |
| Letzte Änderung: | 16 Aug 2021 12:33 |
| PPN: | |
| Sponsoren: | priority program "Adapting surfaces for high temperature applications" of German Research Foundation (DFG): Gu 992/3-2, SPP 1299 |
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