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Number of items: 28.

Sigmund, Jochen ; Saglam, M. ; Vogt, Alexander ; Hartnagel, H. L. ; Buschmann, V. ; Wieder, Thomas ; Fuess, H. (2001)
Microstructure analysis of ohmic contacts on MBE grown n-GaSb and investigation of submicron contacts.
In: Journal of Crystal Growth, 227-228
doi: 10.1016/S0022-0248(01)00785-0
Article, Bibliographie

Sigmund, Jochen ; Saglam, M. ; Vogt, Alexander ; Hartnagel, H. L. ; Buschmann, V. ; Wieder, Thomas ; Fuess, H. (2000)
Microstructure analysis of Ohmic contacts on MBE grown n-GaSb layers and investigation of submicron contacts.
Conference or Workshop Item, Bibliographie

Ichizli, Victoria M. ; Vogt, Alexander ; Sigurdardottir, A. ; Tiginyanu, I. M. ; Hartnagel, H. L. (1999)
Tunneling spectroscopy of AlAs and InSb interfaces in InAs/AlSb heterostructures.
In: Semiconductor science and technology, 14 (2)
doi: 10.1088/0268-1242/14/2/007
Article, Bibliographie

Facsko, S. ; Dekorsy, T. ; Trappe, C. ; Kurz, H. ; Vogt, Alexander ; Hartnagel, H. L. (1999)
Formation of ordered nanoscale semiconductor dots by ion sputtering.
In: American Association for Advance of Science, 285
Article, Bibliographie

Lin, Chih-I. ; Vogt, Alexander ; Saglam, M. ; Hartnagel, H. L. (1999)
GaAs-Schottkydioden mit InAs-Elektrode.
Conference or Workshop Item, Bibliographie

Mutamba, Kabula ; Sigurdardottir, A. ; Vogt, Alexander ; Pfeiffer, J. ; Behner, U. ; Di Carlo, A. ; Hartnagel, H. L. (1999)
Micromachined pressure sensors with AlGaAs/GaAs- and InAs/AlSb/GaSb-resonant tunneling diodes.
Conference or Workshop Item, Bibliographie

Tiginyanu, I. ; Ursaki, V. V. ; Raptis, Y. S. ; Stergiou, V. ; Anatassakis, E. ; Hartnagel, H. L. ; Vogt, Alexander ; Prevot, B. ; Schwab, C. (1999)
Raman modes in porous GaP under hydrostatic pressure.
In: Physica status solidi, 211
Article, Bibliographie

Miranda-Pantoja, J. M. ; Vogt, Alexander ; Schuessler, M. ; Shaalan, M. ; Matulionis, A. ; Sebastian, J. L. ; Hartnagel, H. L. (1998)
Microwave noise measurements on Al 0.3Ga 0.7As/GaAs channels grown by molecular beam epitaxy using As2 and As4.
In: Journal of semiconductor science and technology. 1998, H. 13, S. 833-836
Article, Bibliographie

Vogt, Alexander ; Simon, A. ; Weber, ; Hartnagel, H. L. ; Schikora, J. ; Buschmann, V. ; Fuess, H. (1998)
Non-annealed Ohmic contacts to p-GaSb grown by molecular beam epitaxy.
Conference or Workshop Item, Bibliographie

Vogt, Alexander ; Simon, A. ; Hartnagel, H. L. ; Schikora, J. ; Buschmann, V. ; Rodewald, M. ; Fuess, H. ; Fascko, S. ; Koerdt, C. ; Kurz, H. (1998)
Ohmic contact formation mechanics of the PdGeAu system on n-type GaSb grown by molecular beam epitaxy.
In: Journal of Applied Physics, 83 (12)
Article, Bibliographie

Vogt, Alexander ; Simon, A. ; Hartnagel, H. L. ; Schikora, J. ; Buschmann, V. ; Rodewald, M. ; Fuess, H. ; Fascko, S. ; Kurz, H. (1998)
Ohmsche Kontakte des Systems Pd/Ge/Au auf n-GaSb.
Conference or Workshop Item, Bibliographie

Vogt, Alexander (1998)
Technologiebeiträge zur Herstellung von Heterostrukturbauelementen aus dem Halbleitersystem InAs-GaSb-AlSb.
Technische Universität Darmstadt
Ph.D. Thesis, Bibliographie

Mutamba, Kabula ; Sigurdardottir, A. ; Vogt, Alexander ; Hartnagel, H. L. ; Li, E. H. (1998)
A comparative study of uniaxial pressure effects in intraband AlGaAs/GaAs and interband in As/AlSb/GaSb resonant tunneling diodes.
In: Applied physics letters. 72 (1998), H.13, S.1629-1631
Article, Bibliographie

Shaalan, Mohamed ; Beilenhoff, K. ; Bozzi, M. ; Weinzierl, J. ; Conciauro, G. ; Vogt, Alexander ; Weber, J. ; Fischer, H. ; Kiesow, M. (1997)
A 300 GHz integrated quasioptical frequency multiplier.
Conference or Workshop Item, Bibliographie

Mutamba, Kabula ; Pfeiffer, J. ; Peerlings, J. ; Riemenschneider, R. ; Vogt, Alexander ; Dehé, A. ; Brauch, M. ; Meister, B. ; Dragojevic, N. (1997)
ANSYS-structural design of micromachined Fabry-Pérot filter with planar membranes.
Conference or Workshop Item, Bibliographie

Niranjana, S. ; Goswami, S. N. N. ; Lal, K. ; Vogt, Alexander ; Hartnagel, Hans L.
ed.: Kumar, Vikram (1997)
Determination of crystalline perfection and lattice-mismatch between gallium antimonide epitaxial films and gallium arsenide substrates.
9. International Workshop on Physics of Semiconductor Devices. New Delhi, India (December 16-20, 1997)
Conference or Workshop Item, Bibliographie

Shaalan, Mohamed ; Bozzi, M. ; Weinzierl, J. ; Miranda, J. ; Vogt, Alexander ; Weber, J. ; Hartnagel, H. L. ; Conciauro, G. (1997)
First design of a 430 GHz quasioptical HBV tripler.
Conference or Workshop Item, Bibliographie

Peerlings, Joachim ; Dehé, A. ; Vogt, Alexander ; Tilsch, M. ; Hebeler, C. ; Langenhan, F. ; Meißner, P. ; Hartnagel, H. L. (1997)
GaAs/AlAs micromachined tunable Fabry-Pérot filters with long resonant cavity.
Conference or Workshop Item, Bibliographie

Sigurdardottir, Anna ; Mutamba, K. ; Vogt, Alexander ; Hartnagel, H. L. (1997)
Investigation on the tunneling effect in stressed InAs/AlSb/GaSb-resonant-tunneling diodes.
Conference or Workshop Item, Bibliographie

Peerlings, Joachim ; Dehé, A. ; Vogt, Alexander ; Tilsch, M. ; Hebeler, C. ; Langenhan, F. ; Meißner, P. ; Hartnagel, H. L. (1997)
Long resonator micromachined tunable GaAs/AlAs Fabry-Pérot filter.
In: IEEE Photonics technology letters. 9 (1997), 9, S. 1235-1237
Article, Bibliographie

Vogt, Alexander ; Hartnagel, Hans L. ; Rodewald, M. ; Fuess, H. ; Ressel, P. ; Vogel, K. ; Würfl, J. (1997)
Pd-based Ohmic contacts to GaSb.
21st Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE'97). Scheveningen, The Netherlands (May 25-28, 1997)
Conference or Workshop Item, Bibliographie

Tiginyanu, I. ; Irmer, G. ; Monecke, J. ; Vogt, Alexander ; Hartnagel, H. L. (1997)
Porosity-induced modification of the phonon spectrum of n-GaAs.
In: Semiconductor science technology. 12 (1997), S. 491-493
Article, Bibliographie

Mutamba, Kabula ; Sigurdardottir, A. ; Vogt, Alexander ; Hartnagel, H. L. (1997)
Stress effects in AlGaAs/GaAs and InAs/AlSb/GaSb RTDs for sensing applications.
Conference or Workshop Item, Bibliographie

Vogt, Alexander ; Hartnagel, Hans L. ; Miehe, Gerhard ; Fuess, H. ; Schmitz, J. (1996)
Electrical and microstructure analysis of ohmic contacts to p- and n-type GaSb, grown by molecular beam epitaxy.
In: Journal of Vacuum Science and Technology B, 14
doi: 10.1116/1.588790
Article, Bibliographie

Mutamba, Kabula ; Flath, ; Sigurdardottir, A. ; Vogt, Alexander ; Hartnagel, H. L. (1996)
Pressure effects in AlGaAs/GaAs resonant tunnelling diodes for applications in semiconductor sensors.
In: Lithunian journal of physics. 36 (1996), No. 6, S. 563-565
Article, Bibliographie

Mutamba, Kabula ; Flath, ; Vogt, Alexander ; Sigurdardottir, A. ; Dehé, A. ; Hartnagel, H. L. (1996)
Pressure sensors based on stress dependence of AlGaAs/GaAs RTD characteristics.
Conference or Workshop Item, Bibliographie

Vogt, Alexander ; Brandt, M. ; Pena, D. ; Aller, Ingo ; Hartnagel, Hans L. (1996)
Wachstum und Zuverlässigkeit von resonanten Tunneldioden.
Molecular Beam Epitaxy Workshop. Frankfurt/Oder (1996)
Conference or Workshop Item, Bibliographie

Shaalan, Mohamed ; Vogt, Alexander ; Weber, J. ; Steup, D. ; Eiermann, M.
ed.: Brand, H. (1996)
A novel 300 GHz doubler. Part II: Chip fabrication and initial characterisation.
4th International Workshop on Terahertz Electronics. Erlangen (05.09. - 06.09.1996)
Conference or Workshop Item, Bibliographie

This list was generated on Tue Jul 16 00:36:21 2024 CEST.