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Number of items: 13.

Yilmazoglu, Oktay ; Pavlidis, Dimitris ; Litvin, Yu. M. ; Hubbard, S. M. ; Tiginyanu, I. ; Mutamba, Kabula ; Hartnagel, Hans L. ; Litovchenko, V. G. ; Evtukh, A. A. (2002):
Field emission from quantum size GaN whiskers.
In: International Vacuum Microelectronics Conference <15, 2002, Lyon>: Proceedings ... IVMC 2002.- Lyon, 2002.- QB3.07, [Conference or Workshop Item]

Tiginyanu, I. ; Langa, S. ; Hjort, K. ; Monecke, J. ; Hartnagel, H. L. (2000):
Nanotexturization of III-V compounds for THz-wave generation.
In: THz Conference 2000: 8th International Conference on Terahertz Electronics, 2000 Darmstadt Techn. Univ., Inst. für Hochfrequenztechnik. - Berlin (u.a.): VDE-Verl., 2000. Abstract Booklet, S. 275, Berlin (u.a.), VDE-Verl., [Conference or Workshop Item]

Tiginyanu, I. ; Kravetsky, I. ; Pavlidis, D. ; Eisenbach, A. ; Hildebrandt, R. ; Marowsky, G. ; Hartnagel, H. L. (2000):
Nonlinear optical characterization of GaN layers grown by MOCVD on sapphire.
In: MRS Internet journal nitride semiconductor research. 5S1, W11.52 (2000), [Article]

Tiginyanu, I. ; Schwab, C. ; Sarua, A. ; Irmer, G. ; Monecke, J. ; Sigmund, J. ; Hartnagel, H. L. (2000):
Optical characteristics of nanostructured III-V compounds.
In: NATO Advanced Research Workshop on Frontiers of Nano-Optoelectronic Systems: Molecular Scale Engineering and Processes <2000, Kiev>: Proceedings. - Dordrecht (u.a.): Kluwer Acad. Publ., 2000, Dordrecht (u.a.), Kluwer Acad. Publ., [Conference or Workshop Item]

Tiginyanu, I. ; Kravetsky, I. V. ; Monecke, J. ; Cordts, W. ; Marowsky, G. ; Hartnagel, H. L. (2000):
Semiconductor sieves as nonlinear optical materials.
77, In: Applied physics letters, pp. S. 2415-2417. [Article]

Tiginyanu, I. ; Kravetsky, I. V. ; Marowsky, G. ; Monecke, J. ; Cordts, W. ; Hartnagel, H. L. (2000):
Semiconductor sieves as novel materials for nonlinear optical applications.
In: Materials Research Society: Fall Meeting <2000, Boston, Mass.>. Abstract Booklet; Report ES.13, [Conference or Workshop Item]

Sigmund, Jochen ; Saglam, M. ; Cojocari, O. ; Tiginyanu, I. ; Hartnagel, H. L. (2000):
Untersuchungen von epitaktischem Überwachsen auf porösen GaP und n-GaAs Substraten.
In: Epitaxie von III/V-Halbleitern: 15. Workshop des DGKK-Arbeitskreises , 2000 Bad Dürkheim. Tagungsbd., [Conference or Workshop Item]

Tiginyanu, I. ; Ursaki, V. V. ; Raptis, Y. S. ; Stergiou, V. ; Anatassakis, E. ; Hartnagel, H. L. ; Vogt, Alexander ; Prevot, B. ; Schwab, C. (1999):
Raman modes in porous GaP under hydrostatic pressure.
211, In: Physica status solidi, pp. 281-286. Wiley & Sons Ltd., [Article]

Tiginyanu, I. ; Irmer, G. ; Monecke, J. ; Hartnagel, H. L. (1997):
MicroRaman scattering study of surface-related phonon modes in porous GaP.
In: Physical review. B 55 (1997), S. 6739-6742, [Article]

Tiginyanu, I. ; Irmer, G. ; Monecke, J. ; Vogt, Alexander ; Hartnagel, H. L. (1997):
Porosity-induced modification of the phonon spectrum of n-GaAs.
In: Semiconductor science technology. 12 (1997), S. 491-493, [Article]

Tiginyanu, I. ; Pavlidis, D. ; Cao, J. ; Eisenbach, A. ; Ichizli, Victoria M. ; Hartnagel, Hans L. ; Anedda, A. ; Corpino, R. (1997):
Time-resolved photoluminescence characterisation of GaN layers grown by metalorganic chemical vapor deposition.
In: Conference on Defect Recognition and Imaging Processing <7, 1997>: Proceedings, [Conference or Workshop Item]

Tiginyanu, I. ; Miao, ; Hartnagel, Hans L. ; Rück, ; Tinschert, ; Ursaki, ; Ichizli, Victoria M. (1996):
Raman and electrical characterisation of n-InP implanted by 630-keV nitrogen.
In: International Conference on Indium Phosphide and Related Materials <8, 1996, Schwäbisch Gmünd>: Proceedings, [Conference or Workshop Item]

Tiginyanu, I. ; Ichizli, Victoria M. ; Hartnagel, Hans L. (1996):
Surface vibrational modes in nanoporous III-V compounds.
In: International Conference on Vibrations at Surfaces <8, 1996, Birmingham>: Proceedings, [Conference or Workshop Item]

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