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Number of items: 4.

Gottwald, P. ; Kräutle, H. ; Szentpali, B. ; Hartnagel, H. L. (2001):
Results on passivation of InP by photo-CVD SiO2 and SiNx obtained by using the low-frequency noise measurement technique.
In: Fluctuation and noise letters, 1, pp. S. L35-L43. [Article]

Gottwald, P. ; Kräutle, ; Szentpali, B. ; Kincses, Z. ; Hartnagel, H. L. (1997):
Damage characterization of InP after reactive ion etching using the low-frequency noise measurement technique.
In: Solid state electronics, 41 (4), pp. 539-545. Elsevier, ISSN 0038-1101,
[Article]

Liberis, J. ; Matulionis, A. ; Sakalas, P. ; Saltis, R. ; Dozsa, L. ; Szentpali, B. ; Tuyen, V. van ; Hartnagel, H. L. ; Mutamba, K. ; Sigurdardottir, A. ; Vogt, A. (1997):
Microwave noise in unipolar diodes with nanometric barriers.
In: International Conference on Noise in Physical Systems and 1/f Fluctuations, pp. 67-70,
Singapore, World Scientific, International Conference on Noise in Physical Systems and 1/f Fluctuations, Leuven, 14.-18. July 1997, [Conference or Workshop Item]

Gottwald, P. ; Riemenschneider, R. ; Szentpali, B. ; Hartnagel, H. L. ; Kincses, Z. ; Ruszinko, M. (1995):
Comparison of photo- and plasma-assisted passivating process effects on GaAs devices by means of low-frequency noise measurements.
In: Solid state electronics, 38 (2), pp. 413-417. Elsevier, ISSN 0038-1101,
DOI: https://ui.adsabs.harvard.edu/link_gateway/1995SSEle..38..413G/doi:10.1016/0038-1101(94)00100-T,
[Article]

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