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Number of items: 5.

Endres, Ralf and Gottlob, H. D. B. and Schmidt, M. and Schwendt, D. and Osten, H. J. and Schwalke, Udo (2010):
Crystalline Gadolinium Oxide: A Promising High-K Candidate for Future CMOS Generations.
33, In: ECS Transactions, (3), pp. 25-29, [Online-Edition: http://dx.doi.org/10.1149/1.3481588],
[Article]

Lemme, M. C. and Gottlob, H. D. B. and Echtermeyer, T. and Kurz, H. and Endres, Ralf and Schwalke, Udo and Czernohorsky, M. and Osten, H. J. (2009):
Complementary Metal Oxide Semiconductor Integration of Epitaxial Gd2O3.
27, In: Journal of Vacuum Science & Technology B, (1), pp. 258-261, [Online-Edition: http://dx.doi.org/10.1116/1.3054350],
[Article]

Lemme, M. C. and Gottlob, H. D. B. and Echtermeyer, T. and Kurz, H. and Endres, Ralf and Schwalke, Udo and Czernohorsky, M. and Osten, H. J. (2008):
CMOS Integration of Epitaxial Gd2O3.
In: 15th Workshop on Dielectrics in Microelectronics (WoDiM), 23.-25.06.2008, Bad Saarow, Deutschland, [Conference or Workshop Item]

Gottlob, H. D. B. and Echtermeyer, T. and Mollenhauer, T. and Schmidt, M. and Efavi, J. and Wahlbrink, T. and Lemme, L. M. and Kurz, H. and Endres, Ralf and Stefanov, Yordan and Schwalke, Udo and Czernohorsky, M. and Bugiel, E. and Fissel, A. and Osten, H. J. (2006):
Approaches to CMOS Integration of Epitaxial Gadolinium Oxide High-K Dielectrics.
In: Proceedings of the 36th European Solid-State Device Research Conference (ESSDERC), pp. 150-153, [Online-Edition: http://dx.doi.org/10.1109/ESSDER.2006.307660],
[Article]

Schwalke, Udo and Boye, K. and Haberle, Klaus and Heller, Rudolf and Hess, Gisela and Müller, Gudrun and Ruland, Tino and Tzschöckel, Gerhard and Osten, H. J. and Fissel, A. and Müssig, H.-J. (2002):
Process Integration of Crystalline Pr2O3 High-k Gate Dielectrics.
In: Proceedings of 32nd European Solid State Device Research Conference (ESSDERC), pp. 407-410, [Online-Edition: http://dx.doi.org/10.1109/ESSDERC.2002.194954],
[Article]

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