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Number of items: 2.

Böttner, Th and Kräutle, and Kuphal, and Miethe, and Hartnagel, (1996):
Surface- and sidewall-damage of InP-based optoelectronic devices during reactive ion etching using CH4/H2.
In: International Conference on Indium Phosphide and Related Materials <8, 1996, Schwäbisch Gmünd>: Proceedings, [Conference or Workshop Item]

Kuphal, E. and Mause, and Miethe, and Eisenbach, and Fiedler, and Corbet, (1995):
Electron diffusion length in InGaAs:Zn derived from heterostructure bipolar transistors.
In: Solid state electronics. 38 (1995), Nr. 4, S. 795-799, [Article]

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