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Number of items: 14.

Brandt, Michael ; Krozer, ; Schüßler, ; Lin, ; Simon, ; Vogt, ; Rodriguez, ; Parmeggiani, ; Grajal, (1998):
Application of transmission line pulsed (TLP) stress for thermal and reliability characterisation of compound semiconductor devices.
In: Reliability Center of Japan (RCJ) Symposium <1998, Tokyo>: Proceedings, [Conference or Workshop Item]

Brandt, Michael ; Schüßler, ; Krozer, ; Grajal, ; Hartnagel, (1997):
Transmission line pulse based reliability investigations of HBTs.
In: European Gallium Arsenide and Related III-V Compounds Applications Symposium <5, 1997, Bologna, Italy>: Proceedings. S. 105-108, [Conference or Workshop Item]

Brandt, Michael ; Krozer, ; Schüßler, ; Bock, ; Hartnagel, (1996):
Characterisation of reliability of compound semiconductor devices using electrical pulses.
In: Microelectronics and reliability. 36 (1996), S. 1891-1894, [Article]

Fricke, K. ; Krozer, ; Schüßler, (1996):
Comparison of MESFET, HEMT, and HBT device performance at high temperatures.
In: High - Temperature Electronics Conference <1996, Albuquerque, NM, USA>: Proceedings, [Conference or Workshop Item]

Schuessler, M. ; Statzner, ; Lin, ; Krozer, ; Horn, ; Hartnagel, Hans L. (1996):
Electrochemical deposition of Pd, Ti, and Ge for applications in GaAs technology.
In: Journal of the Electrochemical Society. 143 (1996), No. 4, S. 73-75, [Article]

Dehé, Alfons ; Klingbeil, ; Krozer, ; Fricke, ; Beilenhoff, ; Hartnagel, (1996):
GaAs integrated thermoelectric microwave power sensor.
In: Workshop on Compound Semiconductor Devices and Integrated Circuits <20, 1996, Vilnius, Lithuania>: Proceedings. S. 126-127, [Conference or Workshop Item]

Dehé, Alfons ; Klingbeil, ; Krozer, ; Fricke, ; Beilenhoff, ; Hartnagel, (1996):
GaAs monolithic integrated microwave power sensor in coplanar waveguide technology.
In: IEEE MTT-S International Microwave Symposium <1996>: Digest. S. 161-164, [Conference or Workshop Item]

Dehé, Alfons ; Krozer, ; Chen, ; Hartnagel, (1996):
High-sensitivity microwave power sensor for GaAs-MMIC implementation.
In: Electronic letters. 32 (1996), No. 23, S. 2149-2150, [Article]

Schuessler, M. ; Krozer, ; Bock, ; Brandt, ; Vecchi, ; Losi, ; Hartnagel, Hans L. (1996):
Pulsed stress reliability investigations of Schottky diodes and HBTs.
In: Microelectronics and reliability. 36 (1996), S. 1907-1910, [Article]

Pantoja, J. M. M. ; Grüb, Andreas ; Krozer, ; Franco, (1995):
Accuracy of nonoscillating one-port noise measurements.
In: IEEE Transactions on instrumentation and measurement. 44 (1995), No. 4, S. 853-859, [Article]

Schuessler, M. ; Krozer, ; Pfeiffer, ; Statzner, ; Lee, ; Hartnagel, Hans L. (1995):
AlGaAs/GaAs and GaInP/GaAs HBT for high temperature microwave operation.
In: International Symposium on Signals, Systems and Electronics: ISSE '95 <1995, San Francisco, USA>: Proceedings, [Conference or Workshop Item]

Fricke, Klaus ; Krozer, ; Hartnagel, (1995):
III-V semiconductor properties for high temperature electronics.
In: Materials science and engineering. B 29 (1995), S. 47-53, [Article]

Grüb, Andreas ; Simon, ; Krozer, ; Lin, ; Shaalan, ; Beilenhoff, ; Sigurdardottir, A. ; Hartnagel, H. L. (1995):
Terahertz research at TH Darmstadt.
In: International Workshop on Terahertz Electronics <3, 1995, Zermatt, Schweiz>: Proceedings, [Conference or Workshop Item]

Fricke, Klaus ; Krozer, ; Hartnagel, (1995):
Theromdynamics of microwave devices.
In: Handbook of microwave technology. Hrsg.: T. Koryu Ishii. Vol. 2. Kap. 36, Orlando: Academic Press 1995, Orlando, Academic Press 1995, [Book Section]

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