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Number of items: 3.

Mutamba, K. and Yilmazoglu, O. and Sydlo, C. and Pavlidis, D. and Mir, S. and Hubbard, S. and Zhao, G. and Daumiller, I. (2005):
Technology and characteristics of GaN-based diodes for high-field operation.
In: Proceedings of WOCSDICE ' 05 : Workshop on Compound Semiconductor Devices and Integrated Circuits in Europe <29, 2005,Cardiff, UK>, 2005, S.111 - 112, [Conference or Workshop Item]

Cojocari, Oleg and Popa, V. and Ursaki, V. V. and Tiginyanu, I. M. and Hartnagel, Hans L. and Daumiller, I. (2004):
GaN Schottky multiplier diodes prepared by electroplating : a study of passivation technology.
In: Semiconductor science and technology, 19, pp. 1273-1279. [Article]

Saglam, Mustafa and Mutamba, Kabula and Megej, Alexander and Sydlo, Cezary and Hartnagel, Hans L. and Daumiller, I. (2003):
Influence of polarization chages in Al 0.4 Ga 0.6 N/GaN barrier varactors.
In: Applied physics letters, 82, pp. 227-229. DOI: 10.1063/1.1537516,

This list was generated on Sat Jun 12 01:27:22 2021 CEST.