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Toulemonde, M. ; Assmann, W. ; Muller, D. ; Trautmann, C. :
Electronic sputtering of LiF, CaF 2 , LaF 3 and UF 4 with 197 MeV Au ions. Is the stoichiometry of atom emission preserved?
[Online-Edition: https://doi.org/10.1016/j.nimb.2016.11.034]
In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 406 pp. 501-506. ISSN 0168583X
[Artikel] , (2017)

Assmann, W. ; Ban-d'Etat, B. ; Bender, M. ; Boduch, P. ; Grande, P. L. ; Lebius, H. ; Lelièvre, D. ; Marmitt, G. G. ; Rothard, H. ; Seidl, T. ; Severin, D. ; Voss, K.-O. ; Toulemonde, M. ; Trautmann, C. :
Charge-state related effects in sputtering of LiF by swift heavy ions.
[Online-Edition: https://doi.org/10.1016/j.nimb.2016.12.013]
In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 392 pp. 94-101. ISSN 0168583X
[Artikel] , (2017)

Toulemonde, M. ; Assmann, W. ; Trautmann, C. :
Electronic sputtering of vitreous SiO2: Experimental and modeling results.
[Online-Edition: https://doi.org/10.1016/j.nimb.2016.03.023]
In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 379 pp. 2-8. ISSN 0168583X
[Artikel] , (2016)

Volz, K. ; Schreiber, S. ; Gerlach, J. W. ; Reiber, W. ; Rauschenbach, B. ; Stritzker, B. ; Assmann, W. ; Ensinger, W. :
Heteroepitaxial growth of 3C-SiC on (100) silicon by C60 and Si molecular beam epitaxy.
[Online-Edition: http://dx.doi.org/10.1016/S0921-5093(00)00825-X]
In: Materials Science and Engineering: A, 289 (1-2) pp. 255-264. ISSN 09215093
[Artikel] , (2000)

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