Sirkeli, Vadim P. ; Yilmazoglu, Oktay ; Hajo, Ahid S. ; Nedeoglo, Natalia D. ; Nedeoglo, Dmitrii D. ; Preu, Sascha ; Küppers, Franko ; Hartnagel, Hans L. (2018)
Enhanced Responsivity of ZnSe‐Based Metal–Semiconductor–Metal Near‐Ultraviolet Photodetector via Impact Ionization.
In: physica status solidi (RRL) – Rapid Research Letters, 12 (2)
doi: 10.1002/pssr.201700418
Article, Bibliographie
Abstract
We report on high‐responsivity, fast near‐ultraviolet photodetectors based on bulk ZnSe employing a metal–semiconductor–metal structure with and without interdigital contacts. A very high responsivity of 2.42 and 4.44 A W−1 at 20 V bias voltage and high rejection rate of 7900 and 4810 for the light with a wavelength of 325 nm is obtained for photodetectors without and with interdigital contacts, which indicates an internal gain. The mechanism of internal gain is attributed to the impact ionization of ZnSe atoms under high internal electric field strength of 133 kV cm−1. Also a low dark current of ≈3.4 nA and high detectivity of ≈1.4 × 1011 cm Hz1/2 W−1 at a voltage of 20 V is achieved for the device with interdigital contacts at room temperature.
| Item Type: | Article |
|---|---|
| Erschienen: | 2018 |
| Creators: | Sirkeli, Vadim P. ; Yilmazoglu, Oktay ; Hajo, Ahid S. ; Nedeoglo, Natalia D. ; Nedeoglo, Dmitrii D. ; Preu, Sascha ; Küppers, Franko ; Hartnagel, Hans L. |
| Type of entry: | Bibliographie |
| Title: | Enhanced Responsivity of ZnSe‐Based Metal–Semiconductor–Metal Near‐Ultraviolet Photodetector via Impact Ionization |
| Language: | English |
| Date: | 4 April 2018 |
| Journal or Publication Title: | physica status solidi (RRL) – Rapid Research Letters |
| Volume of the journal: | 12 |
| Issue Number: | 2 |
| DOI: | 10.1002/pssr.201700418 |
| URL / URN: | https://onlinelibrary.wiley.com/doi/abs/10.1002/pssr.2017004... |
| Abstract: | We report on high‐responsivity, fast near‐ultraviolet photodetectors based on bulk ZnSe employing a metal–semiconductor–metal structure with and without interdigital contacts. A very high responsivity of 2.42 and 4.44 A W−1 at 20 V bias voltage and high rejection rate of 7900 and 4810 for the light with a wavelength of 325 nm is obtained for photodetectors without and with interdigital contacts, which indicates an internal gain. The mechanism of internal gain is attributed to the impact ionization of ZnSe atoms under high internal electric field strength of 133 kV cm−1. Also a low dark current of ≈3.4 nA and high detectivity of ≈1.4 × 1011 cm Hz1/2 W−1 at a voltage of 20 V is achieved for the device with interdigital contacts at room temperature. |
| Uncontrolled Keywords: | impact ionization, metal–semiconductor–metal structures, photodetectors, Schottky diodes, ZnS |
| Divisions: | 18 Department of Electrical Engineering and Information Technology 18 Department of Electrical Engineering and Information Technology > Höchstfrequenzelektronik 18 Department of Electrical Engineering and Information Technology > Microwave Electronics 18 Department of Electrical Engineering and Information Technology > Institute for Microwave Engineering and Photonics (IMP) > Photonics and Optical Communications 18 Department of Electrical Engineering and Information Technology > Institute for Microwave Engineering and Photonics (IMP) 18 Department of Electrical Engineering and Information Technology > Institute for Microwave Engineering and Photonics (IMP) > Terahertz Devices and Systems 18 Department of Electrical Engineering and Information Technology > Institute for Microwave Engineering and Photonics (IMP) > Terahertz Systems Technology |
| Date Deposited: | 04 Apr 2018 09:02 |
| Last Modified: | 10 Dec 2021 07:13 |
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