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The (001) 3C SiC surface termination and band structure after common wet chemical etching procedures, stated by XPS, LEED, and HREELS

Tengeler, Sven and Kaiser, Bernhard and Ferro, Gabriel and Chaussende, Didier and Jaegermann, Wolfram (2018):
The (001) 3C SiC surface termination and band structure after common wet chemical etching procedures, stated by XPS, LEED, and HREELS.
In: Applied Surface Science, 427, pp. 480-485. Elsevier Science Publishing, ISSN 01694332,
DOI: 10.1016/j.apsusc.2017.08.220,
[Article]

Abstract

The (001) surface of cubic silicon carbide (3C SiC) after cleaning, Ar sputtering and three different wet chemical etching procedures was thoroughly investigated via (angle resolved) XPS, HREELS, and LEED. While Ar sputtering was found to be unsuitable for surface preparation, all three employed wet chemical etching procedures (piranha/NH4F, piranha/HF, and RCA) provide a clean surface. HF as oxide removal agent tends to result in fluorine traces on the sample surface, despite thorough rinsing. All procedures yield a 1 × 1 Si–OH/C–H terminated surface. However, the XPS spectra reveal some differences in the resulting surface states. NH4F for oxide removal produces a flat band situation, whereas the other two procedures result in a slight downward (HF) or upward (RCA) band bending. Because the band bending is small, it can be concluded that the number of unsaturated surface defects is low.

Item Type: Article
Erschienen: 2018
Creators: Tengeler, Sven and Kaiser, Bernhard and Ferro, Gabriel and Chaussende, Didier and Jaegermann, Wolfram
Title: The (001) 3C SiC surface termination and band structure after common wet chemical etching procedures, stated by XPS, LEED, and HREELS
Language: English
Abstract:

The (001) surface of cubic silicon carbide (3C SiC) after cleaning, Ar sputtering and three different wet chemical etching procedures was thoroughly investigated via (angle resolved) XPS, HREELS, and LEED. While Ar sputtering was found to be unsuitable for surface preparation, all three employed wet chemical etching procedures (piranha/NH4F, piranha/HF, and RCA) provide a clean surface. HF as oxide removal agent tends to result in fluorine traces on the sample surface, despite thorough rinsing. All procedures yield a 1 × 1 Si–OH/C–H terminated surface. However, the XPS spectra reveal some differences in the resulting surface states. NH4F for oxide removal produces a flat band situation, whereas the other two procedures result in a slight downward (HF) or upward (RCA) band bending. Because the band bending is small, it can be concluded that the number of unsaturated surface defects is low.

Journal or Publication Title: Applied Surface Science
Journal volume: 427
Publisher: Elsevier Science Publishing
Uncontrolled Keywords: 3C-SiC, XPS, LEED, HREELS, Band diagram, Wet chemical etching, Work function, interface
Divisions: 11 Department of Materials and Earth Sciences
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences > Material Science > Surface Science
Date Deposited: 27 Sep 2017 08:14
DOI: 10.1016/j.apsusc.2017.08.220
Official URL: https://doi.org/10.1016/j.apsusc.2017.08.220
Funders: We are grateful for the financial support by the DFG in the framework of the Excellence Initiative, Darmstadt Graduate School of Excellence Energy Science and Engineering (GSC 1070).
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