Schwarz, Mike ; Calvet, Laurie E. ; Snyder, John P. ; Krauss, Tillmann ; Schwalke, Udo ; Kloes, Alexander (2017)
On the Physical Behavior of Cryogenic IV and III-V Schottky Barrier MOSFET Devices.
In: IEEE Transactions on Electron Devices, 99
Article, Bibliographie
URL / URN: https://doi.org/10.1109/TED.2017.2726899
| Item Type: | Article |
|---|---|
| Erschienen: | 2017 |
| Creators: | Schwarz, Mike ; Calvet, Laurie E. ; Snyder, John P. ; Krauss, Tillmann ; Schwalke, Udo ; Kloes, Alexander |
| Type of entry: | Bibliographie |
| Title: | On the Physical Behavior of Cryogenic IV and III-V Schottky Barrier MOSFET Devices |
| Language: | English |
| Date: | 28 July 2017 |
| Journal or Publication Title: | IEEE Transactions on Electron Devices |
| Volume of the journal: | 99 |
| URL / URN: | https://doi.org/10.1109/TED.2017.2726899 |
| Divisions: | 18 Department of Electrical Engineering and Information Technology 18 Department of Electrical Engineering and Information Technology > Institute for Semiconductor Technology and Nano-Electronics |
| Date Deposited: | 01 Aug 2017 08:36 |
| Last Modified: | 01 Aug 2017 08:36 |
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