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Damage characterization of InP after reactive ion etching using the low-frequency noise measurement technique

Gottwald, P. ; Kräutle, ; Szentpali, B. ; Kincses, Z. ; Hartnagel, H. L. (1997)
Damage characterization of InP after reactive ion etching using the low-frequency noise measurement technique.
In: Solid state electronics, 41 (4)
Article, Bibliographie

Item Type: Article
Erschienen: 1997
Creators: Gottwald, P. ; Kräutle, ; Szentpali, B. ; Kincses, Z. ; Hartnagel, H. L.
Type of entry: Bibliographie
Title: Damage characterization of InP after reactive ion etching using the low-frequency noise measurement technique
Language: English
Date: 1997
Publisher: Elsevier
Journal or Publication Title: Solid state electronics
Volume of the journal: 41
Issue Number: 4
Divisions: 18 Department of Electrical Engineering and Information Technology
18 Department of Electrical Engineering and Information Technology > Microwave Electronics
Date Deposited: 19 Nov 2008 16:04
Last Modified: 24 Feb 2022 12:36
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