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Thermal simulation and characterisation of the reliability of terahertz Schottky diodes

Brandt, Michael ; Schüßler, M. ; Parmeggiani, E. ; Lin, C. ; Simon, A. ; Hartnagel, H. L. (1997)
Thermal simulation and characterisation of the reliability of terahertz Schottky diodes.
In: Microelectronics Reliability, 37 (10-11)
doi: 10.1016/S0026-2714(97)00134-0
Article, Bibliographie

Abstract

Pulsed stress reliability investigations have been carried out for Schottky diodes. A thermal characterisation of the devices is performed using a numerical, coupled electrical thermal SPICE simulator. Different degradation mechanisms have been identified investigated. A comparison between thermal stress and electrical stress shows an influence of the operating current density and the anode diameter on the device degradation. Analytical calculations, simulation results, and results from the Wunsch-Bell model have been compared.

Item Type: Article
Erschienen: 1997
Creators: Brandt, Michael ; Schüßler, M. ; Parmeggiani, E. ; Lin, C. ; Simon, A. ; Hartnagel, H. L.
Type of entry: Bibliographie
Title: Thermal simulation and characterisation of the reliability of terahertz Schottky diodes
Language: English
Date: 1 October 1997
Publisher: Elsevier
Journal or Publication Title: Microelectronics Reliability
Volume of the journal: 37
Issue Number: 10-11
DOI: 10.1016/S0026-2714(97)00134-0
Abstract:

Pulsed stress reliability investigations have been carried out for Schottky diodes. A thermal characterisation of the devices is performed using a numerical, coupled electrical thermal SPICE simulator. Different degradation mechanisms have been identified investigated. A comparison between thermal stress and electrical stress shows an influence of the operating current density and the anode diameter on the device degradation. Analytical calculations, simulation results, and results from the Wunsch-Bell model have been compared.

Additional Information:

8th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, Arcachon, France, 07. to 10.10.1997

Divisions: 18 Department of Electrical Engineering and Information Technology
18 Department of Electrical Engineering and Information Technology > Microwave Electronics
Date Deposited: 19 Nov 2008 16:04
Last Modified: 13 Jun 2023 09:27
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