Preis, S. ; Wiens, A. ; Maune, H. ; Heinrich, W. ; Jakoby, R. ; Bengtsson, O. (2016)
Reconfigurable package integrated 20 W RF power GaN HEMT with discrete thick-film MIM BST varactors.
In: Electronics Letters, 52 (4)
Article, Bibliographie
URL / URN: http://dx.doi.org/10.1049/el.2015.4109
| Item Type: | Article |
|---|---|
| Erschienen: | 2016 |
| Creators: | Preis, S. ; Wiens, A. ; Maune, H. ; Heinrich, W. ; Jakoby, R. ; Bengtsson, O. |
| Type of entry: | Bibliographie |
| Title: | Reconfigurable package integrated 20 W RF power GaN HEMT with discrete thick-film MIM BST varactors |
| Language: | German |
| Date: | 2016 |
| Journal or Publication Title: | Electronics Letters |
| Volume of the journal: | 52 |
| Issue Number: | 4 |
| URL / URN: | http://dx.doi.org/10.1049/el.2015.4109 |
| Uncontrolled Keywords: | III-V semiconductors;MIM devices;barium compounds;gallium compounds;high electron mobility transistors;software radio;strontium compounds;thick film capacitors;varactors;wide band gap semiconductors;GaN-Ba0.8Sr0.2TiO3;discrete thick-film metal-insulator-metal barium-strontium-titanate varactor;electronically two-dimensional reconfigurable L-section matching network;field simulation;gallium nitride high-electron-mobility transistor;large-signal model;load impedance tunability;metal-insulator-metal BST varactor;output power;power 20 W;power 20.9 W;power added efficiency;reconfigurable package integrated radio frequency;tuneable module |
| Divisions: | 18 Department of Electrical Engineering and Information Technology 18 Department of Electrical Engineering and Information Technology > Institute for Microwave Engineering and Photonics (IMP) > Microwave Engineering 18 Department of Electrical Engineering and Information Technology > Institute for Microwave Engineering and Photonics (IMP) |
| Date Deposited: | 28 Mar 2017 09:27 |
| Last Modified: | 21 Feb 2020 10:48 |
| PPN: | |
| Export: | |
| Suche nach Titel in: | TUfind oder in Google |
 |
Send an inquiry |
Options (only for editors)
 |
Show editorial Details |
Drucken
Impressum