Steinhagen, F. ; Hillmer, H. ; Lösch, R. ; Schlapp, W. ; Göbel, R. ; Kuphal, E. ; Hartnagel, H. L. ; Burkhard, H. (1996)
High-speed complex-coupled strain-compensated AlGaInAs/InP 1.5µm DFB laser diodes.
8th International Conference on Indium Phosphide and Related Materials. Schwäbisch Gmünd, Germany (21.04.1996-25.04.1996)
Conference or Workshop Item, Bibliographie
Abstract
The technology and characterization of high-speed partly loss-coupled distributed feedback (DFB) 1.55 /spl mu/m laser diodes realized on a strain-compensated AlGaInAs/InP MBE/MOVPE grown epitaxial structure is presented. We observe low thresholds, SMSRs of 50 dB, very high -3 dB intensity modulation (IM) bandwidths up to 23 GHz and good large signal behaviour.
Item Type: | Conference or Workshop Item |
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Erschienen: | 1996 |
Creators: | Steinhagen, F. ; Hillmer, H. ; Lösch, R. ; Schlapp, W. ; Göbel, R. ; Kuphal, E. ; Hartnagel, H. L. ; Burkhard, H. |
Type of entry: | Bibliographie |
Title: | High-speed complex-coupled strain-compensated AlGaInAs/InP 1.5µm DFB laser diodes |
Language: | English |
Date: | 26 April 1996 |
Publisher: | IEEE |
Book Title: | Proceedings of 8th International Conference on Indium Phosphide and Related Materials |
Event Title: | 8th International Conference on Indium Phosphide and Related Materials |
Event Location: | Schwäbisch Gmünd, Germany |
Event Dates: | 21.04.1996-25.04.1996 |
Abstract: | The technology and characterization of high-speed partly loss-coupled distributed feedback (DFB) 1.55 /spl mu/m laser diodes realized on a strain-compensated AlGaInAs/InP MBE/MOVPE grown epitaxial structure is presented. We observe low thresholds, SMSRs of 50 dB, very high -3 dB intensity modulation (IM) bandwidths up to 23 GHz and good large signal behaviour. |
Divisions: | 18 Department of Electrical Engineering and Information Technology 18 Department of Electrical Engineering and Information Technology > Microwave Electronics |
Date Deposited: | 19 Nov 2008 16:04 |
Last Modified: | 17 Jan 2023 15:32 |
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