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C+-energy-dependent residual ion damage in GaAs: C grown by the low-energy ion-beam doping method

Iida, Tsutomu ; Makita, Yunosuke ; Shima, Takayuki ; Kimura, Shinji ; Horn, Joachim ; Hartnagel, Hans L. ; Uekusa, Shin‐ichiro (1996)
C+-energy-dependent residual ion damage in GaAs: C grown by the low-energy ion-beam doping method.
In: Journal of Applied Physics, 80 (7)
doi: 10.1063/1.363306
Article, Bibliographie

Item Type: Article
Erschienen: 1996
Creators: Iida, Tsutomu ; Makita, Yunosuke ; Shima, Takayuki ; Kimura, Shinji ; Horn, Joachim ; Hartnagel, Hans L. ; Uekusa, Shin‐ichiro
Type of entry: Bibliographie
Title: C+-energy-dependent residual ion damage in GaAs: C grown by the low-energy ion-beam doping method
Language: English
Date: 1996
Publisher: AIP Publishing
Journal or Publication Title: Journal of Applied Physics
Volume of the journal: 80
Issue Number: 7
DOI: 10.1063/1.363306
Divisions: 18 Department of Electrical Engineering and Information Technology
18 Department of Electrical Engineering and Information Technology > Microwave Electronics
Date Deposited: 19 Nov 2008 16:04
Last Modified: 13 Dec 2023 14:23
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