Horn, J. ; Vogt, A. ; Aller, I. ; Hartnagel, H. L. ; Stehle, M. (1996)
Heterostructure interface characterization using scanning tunneling microscope excited time-resolved luminescence.
In: Journal of Vacuum Science and Technology B, 14 (2)
doi: 10.1116/1.588721
Article, Bibliographie
Abstract
We present time‐resolved luminescence measurements from n+n−n+‐GaAs homostructures and from an AlGaAs/GaAs heterostructure using a scanning tunneling microscope for excitation. From the transient decay of the luminescence intensity, the minority carrier lifetime in the semiconductor can be determined. The longest lifetime measured is 200 ns for a GaAs homostructure. We also demonstrate that the presented technique can be used for the study of recombination at heterointerfaces.
Item Type: | Article |
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Erschienen: | 1996 |
Creators: | Horn, J. ; Vogt, A. ; Aller, I. ; Hartnagel, H. L. ; Stehle, M. |
Type of entry: | Bibliographie |
Title: | Heterostructure interface characterization using scanning tunneling microscope excited time-resolved luminescence |
Language: | German |
Date: | 1 March 1996 |
Publisher: | AIP Publishing |
Journal or Publication Title: | Journal of Vacuum Science and Technology B |
Volume of the journal: | 14 |
Issue Number: | 2 |
DOI: | 10.1116/1.588721 |
Abstract: | We present time‐resolved luminescence measurements from n+n−n+‐GaAs homostructures and from an AlGaAs/GaAs heterostructure using a scanning tunneling microscope for excitation. From the transient decay of the luminescence intensity, the minority carrier lifetime in the semiconductor can be determined. The longest lifetime measured is 200 ns for a GaAs homostructure. We also demonstrate that the presented technique can be used for the study of recombination at heterointerfaces. |
Divisions: | 18 Department of Electrical Engineering and Information Technology 18 Department of Electrical Engineering and Information Technology > Microwave Electronics |
Date Deposited: | 19 Nov 2008 16:04 |
Last Modified: | 13 Jun 2023 08:04 |
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