Krauss, Tillmann ; Wessely, Frank ; Schwalke, Udo (2016)
Favorable Combination of Schottky Barrier and Junctionless Properties in Field-Effect Transistors for High Temperature Applications.
PRiME 2016 / 230th Meeting of the Electrochemical Society (ECS). Honolulu, Hawaii, USA (02.-07.10.2016)
Conference or Workshop Item, Bibliographie
URL / URN: http://prime-intl.org/
| Item Type: | Conference or Workshop Item |
|---|---|
| Erschienen: | 2016 |
| Creators: | Krauss, Tillmann ; Wessely, Frank ; Schwalke, Udo |
| Type of entry: | Bibliographie |
| Title: | Favorable Combination of Schottky Barrier and Junctionless Properties in Field-Effect Transistors for High Temperature Applications |
| Language: | English |
| Date: | 7 October 2016 |
| Event Title: | PRiME 2016 / 230th Meeting of the Electrochemical Society (ECS) |
| Event Location: | Honolulu, Hawaii, USA |
| Event Dates: | 02.-07.10.2016 |
| URL / URN: | http://prime-intl.org/ |
| Divisions: | 18 Department of Electrical Engineering and Information Technology 18 Department of Electrical Engineering and Information Technology > Institute for Semiconductor Technology and Nano-Electronics |
| Date Deposited: | 24 Oct 2016 08:15 |
| Last Modified: | 03 Jun 2018 21:28 |
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