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Effect of p-NiO Interlayer on Internal Quantum Efficiency of p-GaN/n-ZnO Light-Emitting Devices

Sirkeli, Vadim P. ; Yilmazoglu, Oktay ; Küppers, Franko ; Hartnagel, Hans L. (2015)
Effect of p-NiO Interlayer on Internal Quantum Efficiency of p-GaN/n-ZnO Light-Emitting Devices.
In: Journal of Nanoelectronics and Optoelectronics, 9 (6)
Article, Bibliographie

Item Type: Article
Erschienen: 2015
Creators: Sirkeli, Vadim P. ; Yilmazoglu, Oktay ; Küppers, Franko ; Hartnagel, Hans L.
Type of entry: Bibliographie
Title: Effect of p-NiO Interlayer on Internal Quantum Efficiency of p-GaN/n-ZnO Light-Emitting Devices
Language: English
Date: March 2015
Journal or Publication Title: Journal of Nanoelectronics and Optoelectronics
Volume of the journal: 9
Issue Number: 6
URL / URN: http://dx.doi.org/10.1166/jno.2014.1687
Uncontrolled Keywords: GALLIUM NITRIDE; INTERNAL QUANTUM EFFICIENCY; LIGHT-EMITTING DIODE; NICKEL OXIDE; ZINC OXIDE
Divisions: 18 Department of Electrical Engineering and Information Technology
18 Department of Electrical Engineering and Information Technology > Höchstfrequenzelektronik
18 Department of Electrical Engineering and Information Technology > Microwave Electronics
18 Department of Electrical Engineering and Information Technology > Institute for Microwave Engineering and Photonics (IMP) > Photonics and Optical Communications
18 Department of Electrical Engineering and Information Technology > Institute for Microwave Engineering and Photonics (IMP)
Date Deposited: 23 Mar 2016 07:59
Last Modified: 13 Dec 2019 11:19
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