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Ultrafast photocathodes based on n-doped graphene emitters on compound semiconductor photoswitches

Yilmazoglu, O. ; Al-Daffaie, S. ; Küppers, F. ; Hartnagel, H. L. ; Neo, Y. ; Mimura, H. (2015):
Ultrafast photocathodes based on n-doped graphene emitters on compound semiconductor photoswitches.
pp. 180-181, 28th International Vacuum Nanoelectronics Conference (IVNC), [Conference or Workshop Item]

Item Type: Conference or Workshop Item
Erschienen: 2015
Creators: Yilmazoglu, O. ; Al-Daffaie, S. ; Küppers, F. ; Hartnagel, H. L. ; Neo, Y. ; Mimura, H.
Title: Ultrafast photocathodes based on n-doped graphene emitters on compound semiconductor photoswitches
Language: English
Uncontrolled Keywords: III-V semiconductors;electron field emission;gallium arsenide;graphene devices;photocathodes;photoelectric devices;C;GaAs;compound semiconductor photoswitches;diode configuration;fast photomodulation;n-doped graphene emitter;pulsed field electron emission;ultrafast photocathodes;Cathodes;Current measurement;Gallium arsenide;Graphene;Optical resonators;Semiconductor device measurement;field emitter;n-doped graphene;photocathode;semi-insulating GaAs
Divisions: 18 Department of Electrical Engineering and Information Technology
18 Department of Electrical Engineering and Information Technology > Höchstfrequenzelektronik
18 Department of Electrical Engineering and Information Technology > Microwave Electronics
18 Department of Electrical Engineering and Information Technology > Institute for Microwave Engineering and Photonics (IMP) > Photonics and Optical Communications
18 Department of Electrical Engineering and Information Technology > Institute for Microwave Engineering and Photonics (IMP)
Event Title: 28th International Vacuum Nanoelectronics Conference (IVNC)
Date Deposited: 21 Mar 2016 12:02
URL / URN: http://dx.doi.org/10.1109/IVNC.2015.7225573
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