Preis, S. ; Wiens, A. ; Wolff, N. ; Jakoby, R. ; Heinrich, W. ; Bengtsson, O. (2015)
Frequency-agile packaged GaN-HEMT using MIM thickfilm BST varactors.
Microwave Conference (EuMC), 2015 European.
Conference or Workshop Item, Bibliographie
URL / URN: http://dx.doi.org/10.1109/EuMC.2015.7346007
| Item Type: | Conference or Workshop Item |
|---|---|
| Erschienen: | 2015 |
| Creators: | Preis, S. ; Wiens, A. ; Wolff, N. ; Jakoby, R. ; Heinrich, W. ; Bengtsson, O. |
| Type of entry: | Bibliographie |
| Title: | Frequency-agile packaged GaN-HEMT using MIM thickfilm BST varactors |
| Language: | German |
| Date: | September 2015 |
| Event Title: | Microwave Conference (EuMC), 2015 European |
| URL / URN: | http://dx.doi.org/10.1109/EuMC.2015.7346007 |
| Uncontrolled Keywords: | III-V semiconductors;MIM devices;gallium compounds;high electron mobility transistors;semiconductor device measurement;semiconductor device packaging;semiconductor device testing;thermal analysis;thick films;varactors;wide band gap semiconductors;BaSrTiO3;CW rating;GaN;HEMT technology;MIM thickfilm BST varactors;barium-strontium-titanate MIM varactors;electrical efficiency;frequency-agile packaged HEMT;frequency-agile transistor module;modulated-signal measurements;thermal cycling;tuning voltage range;voltage 400 V;wireless communication systems;Impedance;Linearity;Radio frequency;Temperature measurement;Transistors;Tuning;Varactors;BST;power transistors;tunable devices;varactors |
| Divisions: | 18 Department of Electrical Engineering and Information Technology 18 Department of Electrical Engineering and Information Technology > Institute for Microwave Engineering and Photonics (IMP) > Microwave Engineering 18 Department of Electrical Engineering and Information Technology > Institute for Microwave Engineering and Photonics (IMP) |
| Date Deposited: | 21 Mar 2016 12:05 |
| Last Modified: | 03 Jun 2018 21:27 |
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